Product Information

BUK7E1R9-40E,127

BUK7E1R9-40E,127 electronic component of Nexperia

Datasheet
MOSFET N-channel TrenchMOS standard level FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1000
Multiples : 1
1000 : USD 1.0506
10000 : USD 1.0074
100000 : USD 0.9871
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 7.4564
10 : USD 2.5787
50 : USD 2.4647
100 : USD 2.1644
500 : USD 1.9262
1000 : USD 1.7191
2500 : USD 1.7191
5000 : USD 1.6363
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

BUK7E1R9-40E N-channel TrenchMOS standard level FET 19 May 2016 Product data sheet 1. General description Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits AEC Q101 compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Electric and electro-hydraulic power steering Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 324 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 1.5 1.9 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 34.7 - nC GD D DS GS Fig. 13 Fig. 14 1 Continuous current is limited by package.Nexperia BUK7E1R9-40E N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E1R9-40E I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Marking Table 4. Marking codes Type number Marking code BUK7E1R9-40E BUK7E1R9-40E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 40 V DS j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage DC T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 324 W tot mb I drain current V = 10 V T = 25 C Fig. 2 1 - 120 A D GS mb V = 10 V T = 100 C Fig. 2 1 - 120 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 1198 A DM p mb T storage temperature -55 175 C stg BUK7E1R9-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 May 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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