Product Information

BUK7E2R7-30B,127

BUK7E2R7-30B,127 electronic component of NXP

Datasheet
Trans MOSFET N-CH 30V 241A Automotive 3-Pin(3+Tab) I2PAK Rail
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 5.1288 ea
Line Total: USD 35.9

0 - Global Stock
MOQ: 7  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Mounting Style
Packaging
Channel Mode
Pd Power Dissipation
Gate Source Voltage Max
Drain Source On Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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Additional Infomation About Product

BUK7E2R7-30B N-channel TrenchMOS standard level FET Rev. 04 7 June 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --30 V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --300W tot mb dissipation Static characteristics R drain-source V =10V I =25A T =25C -2.3 2.7 m DSon GS D j on-state see Figure 11 see Figure 12 resistance Avalanche ruggedness E non-repetitive I =75A V 30 V --2.3 J DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =10V I =25A V =24V -29 - nC GD GS D DS T =25C see Figure 13 j 1 Continuous current is limited by package.BUK7E2R7-30B NXP Semiconductors N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7E2R7-30B I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK7E2R7-30B All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 04 7 June 2010 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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