Product Information

BUK7880-55A,115

BUK7880-55A,115 electronic component of NXP

Datasheet
MOSFET Trans MOSFET N-CH 55V 7A 4-Pin (3+Tab)
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.6653
10 : USD 0.5336
100 : USD 0.3437
1000 : USD 0.2751
2000 : USD 0.2315
10000 : USD 0.2231
25000 : USD 0.2141
50000 : USD 0.2065
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

BUK7880-55A N-channel TrenchMOS standard level FET 19 June 2015 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia General Purpose Automotive (GPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources 3. Applications 12 V and 24 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150 C - - 55 V DS j j I drain current V = 10 V T = 25 C Fig. 2 Fig. 3 - - 7 A D GS sp P total power dissipation T = 25 C Fig. 1 - - 8 W tot sp Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C - 68 80 m DSon GS D j resistance Fig. 9 Fig. 10 Avalanche ruggedness E non-repetitive drain- I = 7 A V 55 V R = 50 - - 53 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energyNexperia BUK7880-55A N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate 4 D 2 D drain G 3 S source 1 2 3 mbb076 S 4 D drain SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7880-55A SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BUK7880-55A/CU SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7880-55A 788055A BUK7880-55A/CU 788055 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 8 W tot sp I drain current T = 100 C V = 10 V Fig. 2 - 5 A D sp GS T = 25 C V = 10 V Fig. 2 Fig. 3 - 7 A sp GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 30 A DM sp p BUK7880-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 June 2015 2 / 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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