Product Information

BUK7675-55A,118

BUK7675-55A,118 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET TAPE13 PWR-MOS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9246 ea
Line Total: USD 0.92

4785 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4785 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.9246
10 : USD 0.4899
800 : USD 0.4888

658 - WHS 2


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 23
Multiples : 1
23 : USD 0.5084

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

BUK7675-55A N-channel TrenchMOS standard level FET 25 August 2014 Product data sheet 1. General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V and 24 V loads Automotive and general purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 55 V DS j j I drain current V = 10 V T = 25 C Fig. 2 Fig. 3 - - 20.3 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 62 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 175 C - - 150 m DSon GS D j resistance Fig. 11 Fig. 12 V = 10 V I = 10 A T = 25 C - 64 75 m GS D j Fig. 11 Fig. 12 Avalanche ruggedness E non-repetitive drain- I = 11 A V 55 V R = 50 - - 30.3 mJ DS(AL)S D sup GS source avalanche V = 10 V T = 25 C unclamped GS j(init) energyNexperia BUK7675-55A N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb 1 G gate D 2 D drain G 3 S source mbb076 S mb D mounting base connected to 2 drain 1 3 D2PAK (SOT404) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7675-55A D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 7. Marking Table 4. Marking codes Type number Marking code BUK7675-55A BUK7675-55A 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 55 V DS j j V drain-gate voltage R = 20 k - 55 V DGR GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 62 W tot mb I drain current T = 25 C V = 10 V Fig. 2 Fig. 3 - 20.3 A D mb GS T = 100 C V = 10 V Fig. 2 - 14.3 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 81 A DM mb p T storage temperature -55 175 C stg T junction temperature -55 175 C j BUK7675-55A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 25 August 2014 2 / 12

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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