Product Information

BT168GW

BT168GW electronic component of NXP

Datasheet
THYRISTOR, 1A, 600V, SOT-223

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4447 ea
Line Total: USD 2.22

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 100
Multiples : 1
100 : USD 0.351
500 : USD 0.2683
1000 : USD 0.1969
5000 : USD 0.1844

     
Manufacturer
Product Category
Packaging
Peak Repetitive Off-State Voltage Vdrm
Gate Trigger Current Max Igt
Current It Av
On State Rms Current It Rms
Thyristor Case Style
No Of Pins
Peak Non Rep Surge Current Itsm 50Hz
Holding Current Max Ih
Gate Trigger Voltage Max Vgt
Operating Temperature Max
Msl
Svhc
Current Itsm
Operating Temperature Min
Operating Temperature Range
Repetitive Reverse Voltage Vrrm Max
Termination Type
Thyristor Type
LoadingGif

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BT168GW SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT223 surface mountable plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits Sensitive gate Planar passivated for voltage ruggedness and reliability Direct triggering from low power drivers and logic ICs Surface mountable package 3. Applications Circuit breakers RCD/GFI/LCCB applications 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak off- 1 - - 600 V DRM state voltage V repetitive peak reverse - - 600 V RRM voltage I non-repetitive peak on- half sine wave T = 25 C - - 8 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p I average on-state half sine wave T 112 C Fig. 1 - - 0.63 A T(AV) sp current I RMS on-state current half sine wave T 112 C Fig. 2 - - 1 A T(RMS) sp Fig. 3 Static characteristics I gate trigger current V = 12 V I = 10 mA T = 25 C 20 50 200 A GT D T j Fig. 9 1 Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. Scan or click this QR code to view the latest information for this product SOT223NXP Semiconductors BT168GW SCR 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode 4 A K G 2 A anode sym037 3 G gate 1 2 3 4 mb mb connected to anode SC-73 (SOT223) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT168GW SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads BT168GW All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 17 March 2014 2 / 15

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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