The BT169D116 is a 300V, 2A dual N-channel MOSFET transistor manufactured by NXP Semiconductors. It is designed for applications such as DC-DC converters, consumer electronics, and automotive systems. The transistor has an easy-to-use TO-220 full-pack package and rated breakdown voltage of 300 V. It also has a very low on-state resistance and gate charge, helping to reduce power dissipation and improve efficiency. The BT169D116 has a maximum drain-source voltage of 30 V.