Product Information

BLF578

BLF578 electronic component of NXP

Datasheet
RF MOSFET Transistors 1200W, HF-500MHz
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 732.8286 ea
Line Total: USD 732.83

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 1
Multiples : 1

Stock Image

BLF578
NXP

1 : USD 732.8286

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Type
Brand
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BLF578 Power LDMOS transistor Rev. 02 4 February 2010 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Table 1. Application information Mode of operation f V P G DS L p D (MHz) (V) (W) (dB) (%) CW 108 50 1000 26 75 pulsed RF 225 50 1200 24 71 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed performance at frequency of 225 MHz, a supply voltage of 50 V and an I of 40 mA, a t of 100 s with of 20 %: Dq p Output power = 1200 W Power gain = 24 dB Efficiency = 71 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (10 MHz to 500 MHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications Industrial, scientific and medical applications Broadcast transmitter applicationsBLF578 NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 12 1 2 drain2 5 3 gate1 3 3 4 4 gate2 5 4 1 5 source 2 sym117 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLF578 - flanged balanced LDMOST ceramic package SOT539A 2 mounting holes 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 110 V DS V gate-source voltage 0.5 +11 V GS I drain current - 88 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLF578 2 NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 4 February 2010 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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