Product Information

BLF3G21-6,112

BLF3G21-6,112 electronic component of NXP

Datasheet
RF MOSFET Transistors LDMOS TNS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 31.6251 ea
Line Total: USD 31.63

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 31.6251
2 : USD 31.3443
5 : USD 30.7476
10 : USD 30.186

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
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Additional Infomation About Product

BLF3G21-6 UHF power LDMOS transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 6 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz Table 1. Typical class-AB RF performance I = 90 mA T = 25 C in a common source test circuit. Dq h Mode of operation f P G IMD3 P L p D L(1dB) (MHz) (W) (dB) (%) (dB) (W) CW 2000 7 12.5 43 - 7 Two-tone 2000 6 15.5 39 32 - < 2 15.8 - < 50 - Table 2. Typical class-A RF performance I = 200 mA T = 25 C in a modified PHS test fixture. Dq h Mode of operation f P G ACPR L(AV) p D 600k (MHz) (W) (dB) (%) (dBc) PHS 1880 to 1920 2 16 20 75 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Excellent back-off linearity Typical PHS performance at a supply voltage of 26 V and I of 200 mA: Dq Average output power = 2 W Power gain = 16 dB Efficiency = 20 % ACPR = 75 dBc 600k Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (HF to 2200 MHz)BLF3G21-6 UHF power LDMOS transistor No internal matching for broadband operation ESD protection 1.3 Applications RF power amplifiers for GSM, PHS, EDGE, CDMA and W-CDMA base stations and multicarrier applications in the HF to 2200 MHz frequency range Broadcast drivers 2. Pinning information Table 3. Pinning Pin Description Simplified outline Graphic symbol 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 4. Ordering information Type number Package Name Description Version BLF3G21-6 - ceramic surface-mounted package 2 leads SOT538A 4. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage - 65 V DS V gate-source voltage 0.5 13 V GS I drain current - 2.3 A D T storage temperature 65 +200 C stg T junction temperature - 200 C j BLF3G21-6 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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