Product Information

BLF278,112

BLF278,112 electronic component of NXP

Datasheet
RF MOSFET Transistors RF DMOS 250W VHF

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 173.1951 ea
Line Total: USD 173.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 173.1951
2 : USD 168.1407
3 : USD 165.4848

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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BLF278 VHF push-pull power MOS transistor Rev. 5 1 September 2015 Product data sheet IMPORTANT NOTICE Dear customer, As of December 7th, 2015 BL RF Power of NXP Semiconductors will operate as an independent company under the new trade name Ampleon, which will be used in future data sheets together with new contact details. In data sheets, where the previous Philips references is mentioned, please use the new links as shown below. Philips Semiconductors Product Specication VHF push-pull power MOS transistor BLF278 FEATURES PINNING - SOT262A1 High power gain PIN DESCRIPTION Easy power control 1 drain 1 Good thermal stability 2 drain 2 Gold metallization ensures excellent reliability. 3 gate 1 4 gate 2 APPLICATIONS 5 source Broadcast transmitters in the VHF frequency range. DESCRIPTION Dual push-pull silicon N-channel enhancement mode 12 vertical D-MOS transistor encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic d caps. The mounting flange provides the common source g s connection for the transistors. g d 55 CAUTION 34 MAM098 Top view This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and Fig.1 Simplified outline and symbol. SNW-FQ-302B. QUICK REFERENCE DATA RF performance at T =25 C in a push-pull common source test circuit. h f V P G DS L p D MODE OF OPERATION (MHz) (V) (W) (dB) (%) CW, class-B 108 50 300 >20 >60 CW, class-C 108 50 300 typ. 18 typ. 80 CW, class-AB 225 50 250 >14 >50 typ. 16 typ. 55 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2003 Sep 19 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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