Product Information

BLF145,112

BLF145,112 electronic component of NXP

Datasheet
RF MOSFET Transistors RF DMOS 30W HF

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 44.9046 ea
Line Total: USD 44.9

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1
1 : USD 44.9046
2 : USD 44.3196
5 : USD 43.1964
10 : USD 42.4476

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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BLF145 HF power MOS transistor Rev. 04 5 January 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. NXP Semiconductors Product specication HF power MOS transistor BLF145 FEATURES PIN CONFIGURATION High power gain Low noise figure handbook, halfpage Good thermal stability 1 4 Withstands full load mismatch. d DESCRIPTION g Silicon N-channel enhancement s MBB072 mode vertical D-MOS transistor designed for SSB transmitter 23 applications in the HF frequency range. The transistor is encapsulated MSB057 in a 4-lead, SOT123A flange package, with a ceramic cap. All Fig.1 Simplified outline and symbol. leads are isolated from the flange. Matched gate-source voltage (V ) GS groups are available on request. CAUTION This product is supplied in anti-static packing to prevent damage caused by PINNING - SOT123A electrostatic discharge during transport and handling. For further information, PIN DESCRIPTION refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. 1 drain 2 source WARNING 3 gate Product and environmental safety - toxic materials 4 source This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at T = 25 C in a common source test circuit. h (1) MODE OF OPERATION f (MHz) V (V) I (A) P (W) G (dB) (%) d (dB) DS D L p D 3 SSB, class-A 28 28 1.3 8 (PEP) >24 -<- 40 SSB, class-AB 28 28 - 30 (PEP) typ. 20 typ. 40 typ. - 35 Note 1. 2-tone efficiency. Rev. 04 - 5 January 2007 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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