Product Information

BFS25A,115

BFS25A,115 electronic component of NXP

Datasheet
RF Bipolar Transistors TAPE-7 TNS-RFSS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 0.2094
5 : USD 0.2082
50 : USD 0.2036
250 : USD 0.1931
1000 : USD 0.186
2500 : USD 0.1837
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000
3000 : USD 0.2402
N/A

Obsolete
0 - WHS 3

MOQ : 3000
Multiples : 3000
3000 : USD 0.297
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFS25A NPN 5 GHz wideband transistor Product specification December 1997NXP Semiconductors Product specification NPN 5 GHz wideband transistor BFS25A FEATURES PINNING Low current consumption PIN DESCRIPTION Low noise figure Code: N6 Gold metallization ensures 3 1 base handbook, 2 columns excellent reliability 2emitter SOT323 envelope. 3 collector DESCRIPTION 12 Top view MBC870 NPN transistor in a plastic SOT323 envelope. It is designed for use in RF amplifiers and oscillators in pagers and pocket Fig.1 SOT323. phones with signal frequencies up to 2 GHz. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO I DC collector current 6.5 mA C P total power dissipation up to T =170 C note 1 32 mW tot s h DC current gain I = 0.5 mA V =1 V T =25 C50 80 200 FE C CE j f transition frequency I = 1 mA V =1 V f= 1 GHz 3.5 5 GHz T C CE T =25 C amb G maximum unilateral power gain I = 0.5 mA V =1 V f =1 GHz 13 dB UM c CE T =25 C amb F noise figure I = 0.5 mA V =1 V f= 1 GHz 1.8 dB c CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 8V CBO V collector-emitter voltage open base 5V CEO V emitter-base voltage open collector 2V EBO I DC collector current 6.5 mA C P total power dissipation up to T =170 C note 1 32 mW tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s December 1997 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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