Product Information

BFS520,115

BFS520,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 70MA 15V 9GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.2905 ea
Line Total: USD 871.5

0 - Global Stock
MOQ: 3000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 3000
Multiples : 1
3000 : USD 0.2905
6000 : USD 0.2867

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFS520 NPN 9 GHz wideband transistor Product specification September 1995NXP Semiconductors Product specification NPN 9 GHz wideband transistor BFS520 FEATURES It is intended for wideband applications such as satellite TV High power gain tuners, cellular phones, cordless 3 handbook, 2 columns Low noise figure phones, pagers etc., with signal frequencies up to 2 GHz. High transition frequency Gold metallization ensures excellent reliability PINNING SOT323 envelope. PIN DESCRIPTION 12 Code: N2 DESCRIPTION Top view MBC870 1 base NPN transistor in a plastic SOT323 2emitter Fig.1 SOT323. envelope. 3 collector QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE I DC collector current 70 mA C P total power dissipation up to T =118 C note 1 300 mW tot s h DC current gain I =20 mA V =6 V T = 25 C60 120 250 FE C CE j f transition frequency I =20 mA V =6 V f =1 GHz 9 GHz T C CE T =25 C amb G maximum unilateral power gain I =20 mA V = 6 V f = 900 MHz 15 dB UM c CE T =25 C amb F noise figure I =5 mA V = 6 V f = 900 MHz 1.1 1.6 dB c CE T =25 C amb LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 20 V CBO V collector-emitter voltage R =0 15 V CES BE V emitter-base voltage open collector 2.5 V EBO I DC collector current 70 mA C P total power dissipation up to T =118 C note 1 300 mW tot s T storage temperature 65 150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector tab. s September 1995 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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