Product Information

BFT25A,215

BFT25A,215 electronic component of NXP

Datasheet
Transistors RF Bipolar NPN 5V 5GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 10
Multiples : 1
10 : USD 0.6923
100 : USD 0.6536
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000
3000 : USD 0.2347
6000 : USD 0.2347
9000 : USD 0.2347
12000 : USD 0.2347
N/A

Obsolete
0 - WHS 3

MOQ : 3000
Multiples : 3000
3000 : USD 0.273
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1
1 : USD 1.5419
10 : USD 0.7536
100 : USD 0.4198
500 : USD 0.3323
1000 : USD 0.3134
3000 : USD 0.3124
N/A

Obsolete

Read More Specifications

     
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Type
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Rohs Mouser
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "NXP"

Image Description
BFT93W,115 electronic component of NXP BFT93W,115

Transistors RF Bipolar PNP 12V 50mA 4GHZ
Stock : 0

BFT46,215 electronic component of NXP BFT46,215

Transistors RF JFET TAPE7 FET-RFSS
Stock : 0

BFT92,215 electronic component of NXP BFT92,215

Transistors RF Bipolar PNP 25MA 15V 5GHZ
Stock : 0

BFT92W,115 electronic component of NXP BFT92W,115

Transistors RF Bipolar PNP 35MA 15V 4GHZ
Stock : 0

BFU520AR electronic component of NXP BFU520AR

RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 146786

BFT93 electronic component of NXP BFT93

RF Bipolar Transistors PNP 5 GHz wideband transistor
Stock : 0

BFT93,215 electronic component of NXP BFT93,215

Transistors RF Bipolar PNP 12V 5GHZ
Stock : 0

BFT46 electronic component of NXP BFT46

RF JFET Transistors N-channel FET
Stock : 0

BFT92 electronic component of NXP BFT92

RF Bipolar Transistors PNP 5 GHz wideband transistor
Stock : 0

BFT92.215 electronic component of NXP BFT92.215

Transistor: PNP; bipolar; 15V; 25mA; 300mW; SOT23
Stock : 0

More Products By Category "RF Bipolar Transistors"

Image Description
BFU520WF electronic component of NXP BFU520WF

NXP Semiconductors RF Bipolar Transistors NPN wideband silicon RF transistor
Stock : 9824

BFU520WX electronic component of NXP BFU520WX

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 2835

BFU520XAR electronic component of NXP BFU520XAR

RF Bipolar Transistors NPN wideband silicon RF transistor
Stock : 0

BFU520YX electronic component of NXP BFU520YX

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 64355

BFU530XAR electronic component of NXP BFU530XAR

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 3000

BFU530XRR electronic component of NXP BFU530XRR

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 0

BFU550R electronic component of NXP BFU550R

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 25922

BFU580GX electronic component of NXP BFU580GX

NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor
Stock : 2107

BFU630F,115 electronic component of NXP BFU630F,115

Transistors RF Bipolar Single NPN 21GHz
Stock : 11838

BFU660F,115 electronic component of NXP BFU660F,115

Transistors RF Bipolar Single NPN 21GHz
Stock : 7479

Additional Infomation About Product

BFT25A NPN 5 GHz wideband transistor Rev. 5 12 September 2011 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to2GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features and benefits Low current consumption (100 A to 1 mA) Low noise figure Gold metallization ensures excellent reliability. 1.3 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V collector-base open emitter - - 8 V CBO voltage V collector-emitter open base - - 5 V CEO voltage DC collector -- 6.5 mA I C current 1 P total power up to T = 165 C -- 32 mW tot s dissipation h DC current gain I = 0.5 mA V = 1 V 50 80 200 FE C CE f transition I = 1 mA V = 1 V 3.5 5 - GHz T C CE frequency T =25 C amb f = 500 MHz G maximum I = 0.5 mA V = 1 V -15 -dB UM C CE unilateral power T = 25 C amb f= 1 GHz gain F noise figure = I = 0.5 mA -1.8 -dB opt C V = 1 V CE T =25 C f = 1 GHz amb = I = 1 mA -2 -dB opt C V = 1 V CE T =25 C f = 1 GHz amb 1 T is the temperature at the soldering point of the collector tab. s SOT23BFT25A NXP Semiconductors NPN 5 GHz wideband transistor 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Symbol Code: V10 3 3 1base 2emitter 1 3 collector 12 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFT25A - plastic surface mounted package 3 leads SOT23 4. Marking Table 4. Marking 1 Type number Marking code BFT25A 34* 1 * = p : Made in Hong Kong. * = t : Made in Malaysia. * = W : Made in China. 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V collector-base voltage open emitter - 8 V CBO V collector-emitter voltage open base - 5 V CEO V emitter-base voltage open collector - 2 V EBO I DC collector current - 6.5 mA C 1 P total power dissipation up to T =165 C -32 mW tot s T storage temperature 65 +150 C stg T junction temperature - 175 C j 1 T is the temperature at the soldering point of the collector tab. s BFT25A All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 5 12 September 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted