Product Information

BFU520YX

BFU520YX electronic component of NXP

Datasheet
NXP Semiconductors RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9131 ea
Line Total: USD 0.91

62521 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5820 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.455
6000 : USD 0.455
9000 : USD 0.455
12000 : USD 0.455

62521 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 0.9131
10 : USD 0.7556
100 : USD 0.6267
500 : USD 0.5623
1000 : USD 0.4634
3000 : USD 0.4324
6000 : USD 0.4278
9000 : USD 0.4244
24000 : USD 0.4232

     
Manufacturer
Product Category
Series
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
Rohs Mouser
Collector- Base Voltage Vcbo
Dc Current Gain Hfe Max
Operating Temperature Range
Cnhts
Gain Bandwidth Product Ft
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 20 February 2014 Product data sheet 1. Product profile 1.1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package. The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz. 1.2 Features and benefits Low noise, high breakdown RF transistor AEC-Q101 qualified Minimum noise figure (NF ) = 0.65 dB at 900 MHz min Maximum stable gain 19 dB at 900 MHz 11 GHz f silicon technology T 1.3 Applications Applications requiring high supply voltages and high breakdown voltages Broadband differential amplifiers up to 2 GHz Low noise amplifiers for ISM applications ISM band oscillators 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit collector-base voltage open emitter - - 24 V V CB collector-emitter voltage open base - - 12 V V CE shorted base - - 24 V emitter-base voltage open collector - - 2 V V EB collector current - 5 30 mA I C 1 total power dissipation T 87 C -- 450 mW P tot sp DC current gain I =5 mA V =8V 60 95 200 h FE C CE collector capacitance V =8V f = 1MHz - 0.48 - pF C c CB transition frequency I =10 mA V = 8 V f = 900 MHz - 10 - GHz f T C CEBFU520Y NXP Semiconductors Dual NPN wideband silicon RF transistor Table 1. Quick reference data continued T =25 C unless otherwise specified amb Symbol Parameter Conditions Min Typ Max Unit 2 G maximum power gain I =5 mA V = 8 V f = 900 MHz -19 - dB p(max) C CE NF minimum noise figure I =1 mA V = 8 V f = 900 MHz = -0.65- dB min C CE S opt P output power at 1 dB gain I =10 mA V =8V Z =Z =50 -7.0 - dBm L(1dB) C CE S L compression f=900MHz 1 T is the temperature at the solder point of the collector lead. sp 2 If K > 1 then G is the maximum power gain. If K 1 then G =MSG. p(max) p(max) 2. Pinning information Table 2. Discrete pinning Pin Description Simplified outline Graphic symbol 1 base1 2emitter1 3 collector2 4 base2 5emitter2 DDD 6 collector1 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BFU520Y - plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking Type number Marking Description BFU520Y WB* * = t : made in Malaysia * = w : made in China BFU520Y All information provided in this document is subject to legal disclaimers. NXP B.V. 2014. All rights reserved. Product data sheet Rev. 1 20 February 2014 2 of 20

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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