Product Information

BFS17W,115

BFS17W,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 15V 1GHZ
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0865 ea
Line Total: USD 0.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.0865
5 : USD 0.0862
50 : USD 0.083
1000 : USD 0.0773

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET BFS17W NPN 1 GHz wideband transistor Product specification 1995 Sep 04 Supersedes data of November 1992NXP Semiconductors Product specification NPN 1 GHz wideband transistor BFS17W APPLICATIONS PINNING Primarily intended as a mixer, PIN DESCRIPTION 3 handbook, 2 columns oscillator and IF amplifier in UHF and 1base VHF tuners. 2emitter 3 collector DESCRIPTION 12 Silicon NPN transistor in a plastic MBC870 Top view SOT323 (S-mini) package. The BFS17W uses the same crystal as the SOT23 version, BFS17. Marking code: E1 Fig.1 SOT323 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V collector-base voltage 25 V CBO V collector-emitter voltage 15 V CEO I DC collector current 50 mA C P total power dissipation up to T =118 C note 1 300 mW tot s h DC current gain I =2mA V =1V 25 90 FE C CE f transition frequency I =25mA V =5V 1.6 GHz T C CE C collector capacitance I =0 V =10V f=1MHz 0.8 1.5 pF c E CB C feedback capacitance I =1mA V =5V f= 1MHz 0.75 pF re C CE T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector pin. s LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V collector-base voltage open emitter 25 V CBO V collector-emitter voltage open base 15 V CEO V emitter-base voltage open collector 2.5 V EBO I collector current (DC) 50 mA C P total power dissipation T =118 C note 1 300 mW tot s T storage temperature 65 +150 C stg T junction temperature 175 C j Note 1. T is the temperature at the soldering point of the collector pin. s 1995 Sep 04 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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