Product Information

NTE3097-1

NTE3097-1 electronic component of NTE

Datasheet
OPTOISOLATOR ZERO CROSS TR

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

30: USD 3.3547 ea
Line Total: USD 100.64

0 - Global Stock
MOQ: 30  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 30
Multiples : 1
30 : USD 3.3547
50 : USD 2.2
100 : USD 1.7237
200 : USD 1.5989
500 : USD 1.4969

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 2.707
5 : USD 2.4649
8 : USD 2.2511
20 : USD 2.1371

     
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NTE3097 and NTE30971 Optoisolator Zero Crossing TRIAC Driver Description: The NTE3097 and NTE30971 are an optoisolator in a 6Lead DIP type package and contains a gallium arsenide IRED optically coupled to a monolithic silicon detector performing the function of a Zero Voltage Crossing bilateral TRIAC Driver. This device is designed for use with a TRIAC in the interface of logic systems to equipment powered from 240VAC lines such as solidstate relays, industrial controls, motors, solenoids, and consumer appliances, etc. Features: Simplifies Logic Control of 240VAC Power Zero Voltage Crossing High Breakdown Voltage: V = 400V Min DRM High Isolation Voltage: V = 7500V Guaranteed ISO Small, Economical 6 Lead DIP Package dv/dt of 2000V/s Typ., 1000V/s Guaranteed Absolute Maximum Rating: (T = +25C unless otherwise specified) A Infrared Emitting Diode Reverse Voltage, V ................................................................. 6V R Continuous Forward Current, I .................................................... 60mA F Total Power Dissipation (T = +25C, Negligible Power in Output Driver),P ........... 120mW A D Derate Above 25C .................................................... 1.41mW/C Output Driver OffState Output Terminal Voltage, V ............................................. 400V DRM Peak Repetitive Surge Current (PW = 100s, 120pps), I .............................. 1A TSM Total Power Dissipation (T = +25C),P .......................................... 150mW A D Derate Above 25C .................................................... 1.76mW/C Total Device Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V ........... 7500V ISO Total Power Dissipation (T = +25C),P .......................................... 250mW A D Derate Above 25C .................................................... 2.94mW/C Junction Temperature Range, T ........................................... 40 to +100C J Ambient Operating Temperature Range, T ................................... 40 to +85C A Storage Temperature Range, T .......................................... 40 to +150C stg Lead Temperature (During Soldering, 10sec), T .................................... +260C L Note 1. Isolation surge voltage is an internal dielectric breakdown rating. For this test, Pin1 and Pin2 are common, and Pin4, Pin5, and Pin6 are common. Rev. 816Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input LED Reverse Leakage Current I V = 6V 0.05 10 A R R Forward Voltage V I = 30mA 1.3 1.5 V F F Output Detector (I = 0 unless otherwise specified) F Leakage With LED OFF I Either Direction, V = 400V, Note 2 2 100 nA DRM1 DRM Peak OnState Voltage V Either Direction, I = 100mA Peak 1.8 3.0 V TM TM Critical Rate of Rise of dv/dt Note 4 1000 2000 V/s OffState Voltage Coupled LED Trigger Current, I Main Terminal Voltage = 3V, Note 3 FT Current Required to Latch Output NTE3097 15 mA NTE30971 5 mA Holding Current I Either Direction 100 A H Isolation Voltage V f = 60Hz, t = 1sec 7500 VAC(pk) ISO Zero Crossing Inhibit Voltage V I = 15mA, MT1MT2 Voltage Above 5 20 V IH F Which Device Will Not Trigger Leakage in Inhibit State I I = 15mA, V = 400V, OffState 500 A DRM2 F DRM Note 2. Test voltage must be applied within dv/dt rating. Note 3. This device is guaranteed to trigger at an I value less than or equal to max. I . Therefore, F1 FT recommended operating I lies between max. I and absolute max. I (60mA). F FT F Note 4. This is static dv/dt. Commutating dv/dt is a function of the loaddriving thyristor only. 6 54 .260 (6.6) Pin Connection Diagram Max 123 Anode 1 6 Main Terminal .070 (1.78) Max Substrate .350 (8.89) .300 (7.62) Cathode 2 5 Do Not Connect Max ZERO CROSSING .200 (5.08) CIRCUIT N.C. 3 4 Main Terminal .350 Max (8.89) Max .085 (2.16) .100 (2.54) Max

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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