Product Information

NTE3100

NTE3100 electronic component of NTE

Datasheet
INTERRUPTER MODULE, PHOTOTRANSISTOR

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2: USD 21.9089 ea
Line Total: USD 43.82

1154 - Global Stock
Ships to you between
Wed. 15 May to Tue. 21 May
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
475 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 5
Multiples : 1
5 : USD 7.56
50 : USD 5.9587
100 : USD 5.8669
250 : USD 5.6044
500 : USD 5.2894
1000 : USD 5.2106
2500 : USD 5.0531
5000 : USD 4.8562

     
Manufacturer
Product Category
Sensor Output
Forward Current If
Forward Voltage
Reverse Voltage Vr
Aperture Width
Gap Width
Sensor Mounting
Input Current
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NTE3100 Photon Coupled Interrupter Module Description: The NTE3100 Interrupter Module is a gallium arsenide infrared emitting diode and a NPN silicon photo transistor mounted is a polycarbonate housing. The package is designed to optimize the mech- anical resolution, coupling efficiency, ambient light rejection, cost and reliability. Operating on the prin- ciple that opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an ON state to an OFF state. Features: High Gain 3mm Gap Between LED and Detector Polycarbonate Case Protected Against Ambient Light Applications: Copiers, Printers, FAX Machines, Record Players, Cassette Decks, Optoelectronic Switches Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Total Device Operating Temperature Range, T ........................................... 25 to +85C J Storage Temperature Range, T ........................................... 40 to +85C stg Lead Temperature (During Soldering, 1/16 (1.6mm) from case, 10sec max), T ......... +260C L Input Diode Power Dissipation, P ............................................................ 75mW E Forward Current, I ............................................................... 50mA F Reverse Voltage, V ................................................................. 5V R Output Transistor Power Dissipation, P ............................................................ 75mW D Collector Current, I .............................................................. 20mA C CollectorEmitter Voltage, V ...................................................... 30V CEO EmitterCollector Voltage, V ....................................................... 5V ECO Rev. 611Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Input Forward Voltage V I = 50mA 1.2 1.7 V F F Reverse Voltage V I = 100A 5 V R R Reverse Current I V = 5V 100 A R R Output CollectorEmitter Breakdown Voltage V I = 1mA 30 V (BR)CEO C EmitterCollector Breakdown Voltage V I = 100A 6 V (BR)ECO E Collector Emitter Dark Current I V = 10V 100 nA CEO CE Coupled Collector ON Current I I = 5mA, V = 5V 0.15 mA CE(on) F CE I = 20mA, V = 5V 1.0 mA F CE I = 30mA, V = 5V 1.9 mA F CE CollectorEmitter Saturation Voltage V I = 30mA, I = 1.8mA 0.4 V CE(sat) F C TurnOn Time t V = 5V, I = 30mA, R = 2.5k 8 s on CC F L Turn Off Time t 50 s off .984 (25.0) Max .750 (19.05) D Detector * May be S + D * E + E Emitter .118 (3.0) .260 (6.6) .110 (2.8) Typ Sensing Area .106 (2.7) .437 (11.1) Max Max .394 (10.0) Seating Min Plane .327 (8.3) Max .100 (2.54)

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