Product Information

NTE6249

NTE6249 electronic component of NTE

Datasheet
RECTIFIER SILICON 200V 10A

Manufacturer: NTE
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

60: USD 1.3702 ea
Line Total: USD 82.21

0 - Global Stock
MOQ: 60  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 60
Multiples : 1
60 : USD 1.3702
100 : USD 0.956
200 : USD 0.7031
500 : USD 0.6577

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 1.4675
3 : USD 1.3193
10 : USD 1.1654
18 : USD 0.9603
47 : USD 0.9076

     
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NTE6249 & NTE6250 Silicon Rectifier, Ultrafast 10 Amp, TO220 Full Pack Features: Glass Passivated Die Construction Ultrafast 50nS and 100nS Recovery Time Low Forward Voltage Drop Low Reverse Leakage Current High Surge Current Capability Ideally Suited for Use in High Frequency SMPS, Inverters, and As Free Wheeling Diodes Epoxy Meets UL 94V 0 Classification Absolute Maximum Ratings: (T = +25C unless otherwise specified. Single Phase, Half Wave, A 60Hz, Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%) Peak Repetitive Reverse Voltage, V RRM NTE6249 ................................................................... 200V NTE6250 ................................................................... 800V Working Peak Reverse Voltage, V RWM NTE6249 ................................................................... 200V NTE6250 ................................................................... 800V DC Blocking Voltage, V R NTE6249 ................................................................... 200V NTE6250 ................................................................... 800V RMS Reverse Voltage V R(RMS) NTE6249 ................................................................... 140V NTE6250 ................................................................... 560V Average Rectified Output Current (T = +100C), I .................................... 10A C O Non Repetitive Peak Forward Surge Current, I FSM (8.3ms Single Half Sine Wave Superimposed on Rated Load) .................... 150A RMS Isolation Voltage (t = 1 min), V .............................................. 1500V ISO Operating Junction Temperature Range, T .................................. 55 to +150C J Storage Temperature Range, T .......................................... 55 to +150C stg Thermal Resistance, Junction toAmbient, R ................................... 75 C/W thJA Thermal Resistance, Junction toCase, R ....................................... 5 C/W thJC Rev. 617Electrical Characteristics: (T = +25C unless otherwise specified. Single Phase, Half Wave, A 60Hz, Resistive or Inductive Load. For Capacitive Load, Derate Current by 20%) Parameter Symbol Test Conditions Min Typ Max Unit Forward Voltage NTE6249 V I = 10A 1.0 V FM F NTE6250 1.7 V I 10 A Peak Reverse Current T = +25 C RM A At Rated DC Blocking Voltage T = +125 C 500 A A Reverse Recovery Time NTE6249 t I = 0.5A, I = 1A, I = 0.25A, 50 nS rr F R RR Note 1 NTE6250 100 nS Typical Junction Capacitance NTE6249 C Note 1 80 pF J NTE6250 50 pF Note 1. Measured at 1.0 MH and applied reverse voltage of 4.0V D.C. Z All Dimensions Maximum Value .138 (3.50) Dia Max .189 (4.80) .112 (2.85) .406 .130 (3.30) (10.30) .271 (6.90) .606 (15.40) PIN1 3 .164 .114 (2.90) (4.16) .543 (13.80) PIN1 PIN3 .035 (0.90) .210 (5.33) .032 (0.80)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
NTE ELECTRONICS
NTE ELECTRONICS, INC.

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