PSMN3R3-80ES,127 Nexperia

PSMN3R3-80ES N-channel 80 V, 3.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V see Figure 1 - - 120 A D mb GS P total power dissipation T =25C see Figure 2 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T =100 C -4.6 5.4 m DSon GS D j resistance see Figure 12 2 =10V I =25A T =25C -2.8 3.3 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A V =40V -27 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 139 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =120 A - - 676 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. 2 Measured 3 mm from package.PSMN3R3-80ES Nexperia N-channel 80 V, 3.3 m standard level MOSFET in I2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-80ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 - 120 A D GS mb 1 V =10V T =25 C see Figure 1 - 120 A GS mb I peak drain current pulsed t 10 s T =25C - 830 A DM p mb see Figure 3 P total power dissipation T =25 C see Figure 2 - 338 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C - 120 A S mb I peak source current pulsed t 10 s T = 25 C - 830 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =120 A - 676 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 31 October 2011 2 of 14