Product Information

PSMN016-100YS,115

PSMN016-100YS,115 electronic component of Nexperia

Datasheet
MOSFET Single NChannel 100V 204A 117W 29.3mOhms
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0983 ea
Line Total: USD 1.1

1821 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
169 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1
Multiples : 1
1 : USD 0.596
10 : USD 0.5841
25 : USD 0.5841
100 : USD 0.5841

1821 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 1.0983
10 : USD 0.9189
100 : USD 0.7337
500 : USD 0.6958
1500 : USD 0.5911
3000 : USD 0.5566
9000 : USD 0.5439
24000 : USD 0.5417

169 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 13
Multiples : 1
13 : USD 0.5841

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

PSMN016-100YS N-channel 100 V 16.3 m standard level MOSFET in LFPAK Rev. 4 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --100V DS j j I drain current T =25C V =10V --51 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --117W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =15A --29.3m DSon GS D resistance T = 100 C see Figure 12 j V =10 V I =15A - 12.7 16.3 m GS D T =25C see Figure 13 jPSMN016-100YS Nexperia N-channel 100 V 16.3 m standard level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10 V I =30A -16 -nC GD GS D V =50V see Figure 14 DS Q total gate charge - 54 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C --87 mJ DS(AL)S GS j(init) avalanche energy I =51A V 100 V D sup unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN016-100YS LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN016-100YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 27 September 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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