Product Information

PSMN017-80BS,118

PSMN017-80BS,118 electronic component of NXP

Datasheet
MOSFET N-CH 80 V 17 MOHM MOSFET
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 0.7319 ea
Line Total: USD 585.52

0 - Global Stock
Ships to you by
Mon. 20 May
MOQ: 800  Multiples: 800
Pack Size: 800

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 800
Multiples : 800
800 : USD 0.7319

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.5884
10 : USD 1.4075
100 : USD 1.1128

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Transistor Type
Brand
Factory Pack Quantity :
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Additional Infomation About Product

PSMN017-80BS N-channel 80 V 17 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25 C V =10V see Figure 1 --50 A D mb GS P total power dissipation T =25 C see Figure 2 - - 103 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =10A T =100 C see - 15.2 29 m DSon GS D j resistance Figure 12 =10 V I =10A T =25C - 13.7 17 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10 V I =25A V =40V -6 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 26 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C I =50A --55 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GSPSMN017-80BS Nexperia N-channel 80 V 17 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN017-80BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -35 A D GS mb V =10V T =25C see Figure 1 -50 A GS mb I peak drain current pulsed t 10 s T =25C - 200 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 - 103 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 50 A S mb I peak source current pulsed t 10 s T = 25 C - 200 A SM p mb Avalanche ruggedness E non-repetitive drain-source avalanche V =10V T =25C I =50A -55 mJ DS(AL)S GS j(init) D energy V 80 V R =50 unclamped sup GS PSMN017-80BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 1 March 2012 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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