Product Information

PSMN018-80YS.115

PSMN018-80YS.115 electronic component of Nexperia

Datasheet
MOSFET N Trench 80V 45A (Tc) 4V @ 1mA 18 mΩ @ 5A,10V SOT-669 RoHS
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1103 ea
Line Total: USD 1.11

10098 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
7188 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 1.1435
10 : USD 0.9291
25 : USD 0.9212
100 : USD 0.7101
250 : USD 0.7052
500 : USD 0.5902
1000 : USD 0.4293
3000 : USD 0.425
6000 : USD 0.4146

Read More Specifications

     
Manufacturer
Product Category
Kind Of Package
Mounting
Polarisation
Case
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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Additional Infomation About Product

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PSMN018-80YS N-channel LFPAK 80 V 18 m standard level MOSFET Rev. 02 28 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25C V =10V --45 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --89 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =5A --28 m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =5A - 1518m GS D T =25C see Figure 12 j see Figure 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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