Product Information

PSMN020-30MLCX

PSMN020-30MLCX electronic component of Nexperia

Datasheet
MOSFET N-channel 30 V 18.1 mo FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5819 ea
Line Total: USD 0.58

1446 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1651 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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PSMN020-30MLCX
Nexperia

1 : USD 0.5019
10 : USD 0.4295
100 : USD 0.3014
500 : USD 0.2409
1000 : USD 0.2029
1500 : USD 0.1709
9000 : USD 0.1542
24000 : USD 0.1519
49500 : USD 0.1483

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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Additional Infomation About Product

PSMN020-30MLC N-channel 30 V 18.1 m logic level MOSFET in LFPAK33 using TrenchMOS Technology 4 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising Superjunction technology Ultra low QG, QGD, and QOSS for high system efficiencies at low and high loads 1.3 Applications DC-to-DC converters Load switching Synchronous buck regulator 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j I drain current T = 25 C V = 10 V Fig. 1 - - 31.8 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 33 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 5 A T = 25 C - 20.5 27 m DSon GS D j resistance Fig. 10 V = 10 V I = 5 A T = 25 C Fig. 10 - 14.7 18.1 m GS D j Dynamic characteristics Q gate-drain charge V = 4.5 V I = 5 A V = 15 V - 1.7 - nC GD GS D DS Fig. 12 Fig. 13 Q total gate charge V = 4.5 V I = 5 A V = 15 V - 4.6 - nC G(tot) GS D DS Fig. 12 Fig. 13Nexperia PSMN020-30MLC N-channel 30 V 18.1 m logic level MOSFET in LFPAK33 using TrenchMOS Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN020-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) 4 SOT1210 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 31.8 A D GS mb V = 10 V T = 100 C Fig. 1 - 22.5 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 127 A DM p mb P total power dissipation T = 25 C Fig. 2 - 33 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 130 - V ESD Source-drain diode I source current T = 25 C - 27.4 A S mb I peak source current pulsed t 10 s T = 25 C - 127 A SM p mb PSMN020-30MLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 4 September 2012 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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