Product Information

PSMN026-80YS

PSMN026-80YS electronic component of Nexperia

Datasheet
MOSFET, N CH, 80V, 34A, SOT669
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.536 ea
Line Total: USD 1.54

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 100
Multiples : 1

Stock Image

PSMN026-80YS
Nexperia

100 : USD 0.5465
500 : USD 0.4687
1000 : USD 0.399

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Current Id Max
Operating Temperature Min
Operating Temperature Range
Voltage Vgs Max
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Additional Infomation About Product

NextPower MOSFETs Smaller, Faster, CoolerNextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low R device and accept the DS(on) higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application? The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise Many competitors focus only on optimising R and Q . As Q gets lower then losses due to Q and Q become DS(on) g g oss gd more significant. NextPower uses Superjunction technology to provide the optimum balance between low R , low DS(on) Q , low Q and Q to give optimum switching performance. NextPower delivers superior SOA performance, and oss g(tot) gd low Q reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest R oss DS(on) with sub 1 m types at both 25 V and 30 V. LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages. Key benefits } Optimum switching performance under light & heavy } High efficiency in power switching applications load conditions } Industrys lowest R Power-SO8 - Less than 1 m } L FPAK package for compatibility with other vendor DS(on) at 25 V and 30 V Power-SO8 types } Low Q for reduced output losses between DRAIN & } E liminates costly X-ray inspection LFPAK solder joints oss SOURCE can be optically inspected } Low Q for reduced switching losses and high frequency gd switching Key applications } 20 V rated GATE provides better tolerance to voltage } Synchronous buck regulators transients than lateral MOSFET types } DC-DC conversion } Superior Safe Operating Area performance compared } Voltage regulator modules (VRM) to other Trench MOSFET vendors } Power OR-ing } Optimised for 4.5 V gate drive voltage 2 NextPower MOSFETs - Visit us at www.nxp.com/mosfets

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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