Product Information

PMT21EN

PMT21EN electronic component of Nexperia

Datasheet
MOSFET, N CH, 30V, 7.4A, SOT223
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3741 ea
Line Total: USD 0.37

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 29 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

PMT21EN
Nexperia

1 : USD 0.5418
25 : USD 0.4463
100 : USD 0.3576
250 : USD 0.2972
500 : USD 0.2883
3000 : USD 0.2363

Read More Specifications

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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Additional Infomation About Product

PMT21EN 30 V, 7.4 A N-channel Trench MOSFET Rev. 1 30 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --30 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C --7.4 A D GS amb Static characteristics R drain-source on-state V =10V I =7.4 A T = 25 C - 18 21 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 4 2 D drain 3S source G 4 D drain 132 S 017aaa253 SOT223 (SC-73) SOT223PMT21EN NXP Semiconductors 30 V, 7.4 A N-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMT21EN SC-73 plastic surface-mounted package with increased heatsink 4 SOT223 leads 4. Marking Table 4. Marking codes Type number Marking code PMT21EN MT21EN 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - 30 V DS j V gate-source voltage -20 20 V GS 1 I drain current0 V =10V T =25C -7.4 A D GS amb 1 V =10V T = 100 C -4.7 A GS amb I peak drain current T = 25 C single pulse t 10 s - 30 A DM amb p 2 P total power dissipation T =25C - 820 mW tot amb 1 - 1760 mW T = 25 C - 8330 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C -1.9 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. PMT21EN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 30 August 2011 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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