Product Information

NX3008CBKS,115

NX3008CBKS,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 3030V, 350200 MA NP-CH TRENCH MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4566 ea
Line Total: USD 0.46

52235 - Global Stock
Ships to you between
Fri. 10 May to Tue. 14 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3008CBKS,115
Nexperia

3000 : USD 0.0636
6000 : USD 0.0636
12000 : USD 0.0636
15000 : USD 0.0636
45000 : USD 0.0636

5820 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3008CBKS,115
Nexperia

3000 : USD 0.0611

52235 - Global Stock


Ships to you between Fri. 10 May to Tue. 14 May

MOQ : 1
Multiples : 1

Stock Image

NX3008CBKS,115
Nexperia

1 : USD 0.4566
10 : USD 0.3243
100 : USD 0.1322
1000 : USD 0.1
3000 : USD 0.0725
9000 : USD 0.0667
24000 : USD 0.0633
45000 : USD 0.0587

61110 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3008CBKS,115
Nexperia

3000 : USD 0.0676
9000 : USD 0.065
24000 : USD 0.0638

174600 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 3000
Multiples : 3000

Stock Image

NX3008CBKS,115
Nexperia

3000 : USD 0.0643
9000 : USD 0.0605
24000 : USD 0.0592

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD protection up to 2 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Level shifter Load switch Power supply converter Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel) V drain-source voltage T=25C ---30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C ---200mA D GS amb TR1 (N-channel) V drain-source voltage T=25C --30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 350 mA D GS amb TR1 (N-channel), Static characteristics R drain-source on-state V =4.5 V I =350 mA -1 1.4 DSon GS D resistance T =25C j TR2 (P-channel), Static characteristics R drain-source on-state V =-4.5V -2.8 4.1 DSon GS resistance I = -200 mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .NX3008CBKS Nexperia 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (SC-88) 6D1 drain TR1 S1 S2 017aaa262 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008CBKS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008CBKS LD% 1 % = placeholder for manufacturing site code. NX3008CBKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 29 July 2011 2 of 21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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