Product Information

NX3008PBKT,115

NX3008PBKT,115 electronic component of NXP

Datasheet
MOSFET 30V 200 MA P-CH TRENCH MOSFET

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 3000
3000 : USD 0.0516
9000 : USD 0.048
18000 : USD 0.0468
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.4435
10 : USD 0.2959
100 : USD 0.1234
1000 : USD 0.0845
3000 : USD 0.0644
9000 : USD 0.0541
24000 : USD 0.0513
45000 : USD 0.0478
99000 : USD 0.0409
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of NX3008PBKT 30 V, 200 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T =25C - - -30 V V DS j gate-source voltage -8 - 8 V V GS 1 drain current V =-4.5V T =25C -- -200mA I D GS amb Static characteristics drain-source on-state V =-4.5V -2.8 4.1 R DSon GS resistance I =-200mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . SOT416

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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