Product Information

NX3008PBKVL

NX3008PBKVL electronic component of Nexperia

Datasheet
MOSFET NX3008PBKSOT23TO-236AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2705 ea
Line Total: USD 0.27

26633 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
24648 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

NX3008PBKVL
Nexperia

1 : USD 0.2705
10 : USD 0.1934
100 : USD 0.0795
1000 : USD 0.0486
2500 : USD 0.0451
10000 : USD 0.038
20000 : USD 0.032
50000 : USD 0.0296
100000 : USD 0.0296

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

NX3008PBK 30 V, 230 mA P-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25C - - -30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =-4.5V T =25C - - -230 mA D GS amb Static characteristics R drain-source on-state V =-4.5V -2.8 4.1 DSon GS resistance I = -200 mA T =25C D j 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .NX3008PBK Nexperia 30 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 SOT23 (TO-236AB) S 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008PBK TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008PBK KT% 1 % = placeholder for manufacturing site code. NX3008PBK All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 1 August 2011 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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