NX3020NAKV

NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 4.5 V T = 25 C 1 - - 200 mA D GS amb Static characteristics (per transistor) R drain-source on-state V = 10 V I = 100 mA T = 25 C - 2.7 4.5 DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm . Scan or click this QR code to view the latest information for this product SOT666NXP Semiconductors NX3020NAKV 30 V, 200 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D1 D2 1 S1 source TR1 6 5 4 2 G1 gate TR1 G1 3 D2 drain TR2 G2 4 S2 source TR2 1 2 3 5 G2 gate TR2 SOT666 S1 S2 6 D1 drain TR1 017aaa256 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3020NAKV SOT666 plastic surface-mounted package 6 leads SOT666 7. Marking Table 4. Marking codes Type number Marking code NX3020NAKV GB 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V = 4.5 V T = 25 C 1 - 200 mA D GS amb V = 4.5 V T = 100 C 1 - 120 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 800 mA DM amb p P total power dissipation T = 25 C 2 - 260 mW tot amb 1 - 370 mW T = 25 C - 1100 mW sp NX3020NAKV All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 2 / 14