Product Information

NX3008NBKS,115

NX3008NBKS,115 electronic component of Nexperia

Datasheet
NXP Semiconductors MOSFET 30V 350 MA DUAL N-CH TRENCH MOSFET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2139 ea
Line Total: USD 0.21

1117710 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1117710 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NX3008NBKS,115
Nexperia

1 : USD 0.2139
10 : USD 0.1679
100 : USD 0.0954
1000 : USD 0.0736
3000 : USD 0.0609
9000 : USD 0.0587
99000 : USD 0.0563

1617960 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 3000
Multiples : 3000

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NX3008NBKS,115
Nexperia

3000 : USD 0.0632

8730 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 148
Multiples : 1

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NX3008NBKS,115
Nexperia

148 : USD 0.061
1000 : USD 0.0605
3000 : USD 0.0593

8657 - WHS 4


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 131
Multiples : 1

Stock Image

NX3008NBKS,115
Nexperia

131 : USD 0.273
250 : USD 0.2708
500 : USD 0.2686
1000 : USD 0.2633

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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NX3008NBKS 30 V, 350 mA dual N-channel Trench MOSFET Rev. 1 1 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection up to 2 kV Low threshold voltage AEC-Q101 qualified Trench MOSFET technology 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor V drain-source voltage T=25C --30 V DS j V gate-source voltage -8 - 8 V GS 1 I drain current V =4.5 V T =25C - - 350 mA D GS amb Static characteristics (per transistor) R drain-source on-state V =4.5 V I =350 mA -1 1.4 DSon GS D resistance T =25C j 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 1 cm .NX3008NBKS Nexperia 30 V, 350 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1 source TR1 6 5 D1 D2 4 2 G1 gate TR1 3D2 drain TR2 G1 G2 4S2 source TR2 132 5 G2 gate TR2 SOT363 (SC-88) 6D1 drain TR1 S1 S2 017aaa256 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX3008NBKS SC-88 plastic surface-mounted package 6 leads SOT363 4. Marking Table 4. Marking codes 1 Type number Marking code NX3008NBKS LB% 1 % = placeholder for manufacturing site code. NX3008NBKS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 1 August 2011 2 of 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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