X-On Electronics has gained recognition as a prominent supplier of BUK9214-30A,118 mosfet across the USA, India, Europe, Australia, and various other global locations. BUK9214-30A,118 mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

BUK9214-30A,118 Nexperia

BUK9214-30A,118 electronic component of Nexperia
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Part No.BUK9214-30A,118
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET Trans MOSFET N-CH 30V 63A 3-Pin(2+Tab)
Datasheet: BUK9214-30A,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9305 ea
Line Total: USD 1.93

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 1
Multiples : 1
1 : USD 3.318
10 : USD 2.8606
100 : USD 2.231
500 : USD 1.8429
1000 : USD 1.455

0 - WHS 2


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 1
Multiples : 1
1 : USD 3.318
10 : USD 2.8606
100 : USD 2.231
500 : USD 1.8429
1000 : USD 1.455

0 - WHS 3


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 1.4083
5000 : USD 1.3227

0 - WHS 4


Ships to you between Fri. 14 Jun to Thu. 20 Jun

MOQ : 1
Multiples : 1
1 : USD 1.9305
10 : USD 1.521
100 : USD 1.183
500 : USD 0.9669
1000 : USD 0.7979

0 - WHS 5


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 3.713
10 : USD 1.3913
100 : USD 1.0364
500 : USD 0.857
1000 : USD 0.6849
2500 : USD 0.6347

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the BUK9214-30A,118 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BUK9214-30A,118 and other electronic components in the MOSFET category and beyond.

BUK9214-30A N-channel TrenchMOS logic level FET Rev. 3 14 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Low conduction losses due to low Suitable for logic level gate drive on-state resistance sources Q101 compliant Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads Motors, lamps and solenoids Automotive and general purpose power switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j I drain current V =5 V T =25C see Figure 1 --63 A D GS mb see Figure 3 P total power dissipation T =25C see Figure 2 - - 107 W tot mb Static characteristics R drain-source on-state V = 4.5 V I =25A T = 25 C - - 15.5 m DSon GS D j resistance V =10 V I =25A T =25C - 9 12 m GS D j V =5 V I =25A T =25C -11 14 m GS D j see Figure 11 see Figure 12 Dynamic characteristics Q gate-drain charge V =5 V I =25A V =24V - 12.2 - nC GD GS D DS T =25C see Figure 13 j Avalanche ruggedness E non-repetitive drain-source I =63A V 30 V R =50 - - 230 mJ DS(AL)S D sup GS avalanche energy V =5 V T = 25 C unclamped GS j(init)BUK9214-30A Nexperia N-channel TrenchMOS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 1 3 SOT428 (DPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9214-30A DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code BUK9214-30A BUK9214-30A BUK9214-30A All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 14 June 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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