Product Information

BUK7Y28-75B,115

BUK7Y28-75B,115 electronic component of Nexperia

Datasheet
MOSFET N-CHANNEL TRENCHMOS STANDARD LEVEL FET

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0005 ea
Line Total: USD 1

1425 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.5135
3000 : USD 0.5135
4500 : USD 0.5135
6000 : USD 0.5135
7500 : USD 0.5135

1425 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1
1 : USD 1.0005
10 : USD 0.8315
100 : USD 0.667
500 : USD 0.5727
1000 : USD 0.4853
1500 : USD 0.4646
3000 : USD 0.4588
9000 : USD 0.4404

1455 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.8271

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Transistor Type
Brand
Factory Pack Quantity :
Configuration
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BUK7Y28-75B N-channel TrenchMOS standard level FET Rev. 04 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V, 24 V and 42 V loads General purpose power switching Automotive systems Solenoid drivers DC-to-DC converters Transmission control Engine management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --75 V DS j j voltage I drain current V =10V T =25C --35.5A D GS mb see Figure 1 see Figure 4 P total power T = 25 C see Figure 2 --85 W tot mb dissipation Static characteristics R drain-source V =10V I =15A - 2328m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13BUK7Y28-75B Nexperia N-channel TrenchMOS standard level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =35.5 A V 75 V --75 mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =15A V =60V -7.4 -nC GD D DS V = 10 V see Figure 14 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y28-75B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK7Y28-75B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 04 7 April 2010 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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