Product Information

BUK7Y3R0-40HX

BUK7Y3R0-40HX electronic component of Nexperia

Datasheet
N-channel Standard Level MOSFET 40V 3mO LFPAK56 T/R
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.8285 ea
Line Total: USD 1.83

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1500
Multiples : 1500

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BUK7Y3R0-40HX
Nexperia

1500 : USD 1.0607

0 - WHS 2


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BUK7Y3R0-40HX
Nexperia

1 : USD 1.8285
10 : USD 1.5985
100 : USD 1.3225
500 : USD 1.15
1500 : USD 0.9534
3000 : USD 0.9143
9000 : USD 0.9143

0 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

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BUK7Y3R0-40HX
Nexperia

1 : USD 2.4153
5 : USD 2.1711
10 : USD 1.6419
27 : USD 1.5469

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Qualification
Tradename
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

BUK7Y3R0-40H N-channel 40 V, 3.0 m standard level MOSFET in LFPAK56 14 September 2017 Product data sheet 1. General description Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction technology, housed in a robust LFPAK56 package. This product has been fully designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. 2. Features and benefits Fully automotive qualified to AEC-Q101: 175 C rating suitable for thermally demanding environments Trench 9 Superjunction technology: Reduced cell pitch enables enhanced power density and efficiency with lower R in DSon same footprint Improved SOA and avalanche capability compared to standard TrenchMOS Tight V limits enable easy paralleling of MOSFETs GS(th) LFPAK Gull Wing leads: High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike traditional QFN packages Visual (AOI) soldering inspection, no need for expensive x-ray equipment Easy solder wetting for good mechanical solder joint LFPAK copper clip technology: Improved reliability, with reduced R and R th DSon Increases maximum current capability and improved current spreading 3. Applications 12 V automotive systems Motors, lamps and solenoid control Start-Stop micro-hybrid applications Transmission control Ultra high performance power switchingNexperia BUK7Y3R0-40H N-channel 40 V, 3.0 m standard level MOSFET in LFPAK56 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 40 V DS j I drain current V = 10 V T = 25 C - - 120 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 172 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C 1.8 2.55 3 m DSon GS D j resistance Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 32 V V = 10 V - 6.3 15.8 nC GD D DS GS Fig. 12 Fig. 13 Source-drain diode Q recovered charge I = 25 A dI /dt = -100 A/s V = 0 V - 19.5 - nC r S S GS V = 20 V DS S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.8 - S S GS V = 20 V T = 25 C Fig. 16 DS j BUK7Y3R0-40H All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 14 September 2017 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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