Product Information

BUK7Y3R5-40E,115

BUK7Y3R5-40E,115 electronic component of Nexperia

Datasheet
MOSFET BUK7Y3R5-40E/LFPAK/REEL 7" Q1/

Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6708 ea
Line Total: USD 0.67

404 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33465 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1500
Multiples : 1500
1500 : USD 0.6376
3000 : USD 0.6059
7500 : USD 0.5938
9000 : USD 0.5938
10500 : USD 0.5938

3502 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1
1 : USD 0.8227
10 : USD 0.8143
25 : USD 0.7493
100 : USD 0.743
250 : USD 0.7366
500 : USD 0.7219
1000 : USD 0.7219
3000 : USD 0.7219

404 - WHS 3


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.6708
10 : USD 0.556
30 : USD 0.4976
100 : USD 0.4173
500 : USD 0.3847
1500 : USD 0.3675

2571 - WHS 4


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 1.173
10 : USD 0.9936
100 : USD 0.8061
500 : USD 0.7314
1000 : USD 0.7188
1500 : USD 0.6245
3000 : USD 0.5831
9000 : USD 0.5739

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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BUK7Y3R5-40E N-channel 40 V, 3.5 m standard level MOSFET in LFPAK56 19 June 2015 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V Automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 10 V T = 25 C Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 167 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.5 3.5 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 32 V - 16.2 - nC GD GS D DS T = 25 C Fig. 13 Fig. 14 j 1 Continuous current is limited by package.Nexperia BUK7Y3R5-40E N-channel 40 V, 3.5 m standard level MOSFET in LFPAK56 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y3R5-40E LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7Y3R5-40E 73E540 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS V gate-source voltage T 175 C DC -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 167 W tot mb I drain current T = 25 C V = 10 V Fig. 2 1 - 100 A D mb GS T = 100 C V = 10 V Fig. 2 1 - 100 A mb GS I peak drain current T = 25 C pulsed t 10 s Fig. 3 - 622 A DM mb p T storage temperature -55 175 C stg BUK7Y3R5-40E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 June 2015 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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