Product Information

BUK7M67-60EX

BUK7M67-60EX electronic component of Nexperia

Datasheet
MOSFET BUK7M67-60E/MLFPAK/REEL 7" Q1/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6111 ea
Line Total: USD 0.61

6211 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6211 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

BUK7M67-60EX
Nexperia

1 : USD 0.6111
10 : USD 0.5138
100 : USD 0.3821
500 : USD 0.3144
1000 : USD 0.2349
1500 : USD 0.2017
9000 : USD 0.2017
24000 : USD 0.1981

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.

More Products By Manufacturer "Nexperia"

Image Description
BUK7Y07-30B,115 electronic component of NXP BUK7Y07-30B,115

Trans MOSFET N-CH 30V 75A Automotive 5-Pin(4+Tab) LFPAK T/R
Stock : 0

BUK7Y07-30B electronic component of NXP BUK7Y07-30B

MOSFET, N CH, 30V, 75A, LFPAK
Stock : 0

BUK7M8R0-40EX electronic component of Nexperia BUK7M8R0-40EX

MOSFET BUK7M8R0-40E/MLFPAK/REEL 7" Q1
Stock : 760

BUK7M9R9-60EX electronic component of Nexperia BUK7M9R9-60EX

MOSFET BUK7M9R9-60E/MLFPAK/REEL 7" Q1
Stock : 0

BUK7M6R3-40EX electronic component of Nexperia BUK7M6R3-40EX

MOSFET BUK7M6R3-40E/MLFPAK/REEL 7" Q1
Stock : 1497

BUK7S1R0-40HJ electronic component of Nexperia BUK7S1R0-40HJ

MOSFET N-channel 40 V 1.0 mO standard level MOSFET in LFPAK88
Stock : 1

BUK7M6R0-40HX electronic component of Nexperia BUK7M6R0-40HX

Transistor MOSFET 40V 50A 8-Pin LFPAK33
Stock : 0

BUK7M6R7-40HX electronic component of Nexperia BUK7M6R7-40HX

Transistor MOSFET 40V 50A 8-Pin LFPAK33
Stock : 1500

BUK7M8R5-40HX electronic component of Nexperia BUK7M8R5-40HX

Transistor MOSFET 40V 40A 8-Pin LFPAK33
Stock : 10

BUK7M9R5-40HX electronic component of Nexperia BUK7M9R5-40HX

Transistor MOSFET 40V 40A 8-Pin LFPAK33
Stock : 0

More Products By Category "MOSFET"

Image Description
IPD60N10S412ATMA1 electronic component of Infineon IPD60N10S412ATMA1

MOSFET N-CHANNEL 100+
Stock : 4396

R6024KNJTL electronic component of ROHM R6024KNJTL

MOSFET Nch 600V 24A Si MOSFET
Stock : 1000

STB7NK80Z-1 electronic component of STMicroelectronics STB7NK80Z-1

MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
Stock : 0

SQ1464EEH-T1_GE3 electronic component of Vishay SQ1464EEH-T1_GE3

MOSFET 60V Vds; +/-8V Vgs SOT-363/SC-70
Stock : 19869

RS3E095BNGZETB electronic component of ROHM RS3E095BNGZETB

MOSFET Nch 30V 9.5A Si MOSFET
Stock : 1834

IRFH7107TRPBF electronic component of Infineon IRFH7107TRPBF

MOSFET 75V 75A 8.5mOhm 48nC Qg
Stock : 0

IPZA60R099P7XKSA1 electronic component of Infineon IPZA60R099P7XKSA1

Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-4
Stock : 199

IPSA70R2K0P7SAKMA1 electronic component of Infineon IPSA70R2K0P7SAKMA1

700V 3A 17.6W 2O@500mA,10V null TO-251-3 MOSFETs ROHS
Stock : 1528

SIR668DP-T1-RE3 electronic component of Vishay SIR668DP-T1-RE3

MOSFET 100V Vds 20V Vgs PowerPAK SO-8
Stock : 1

SIRC10DP-T1-GE3 electronic component of Vishay SIRC10DP-T1-GE3

MOSFET 30V Vds 20V Vgs PowerPAK SO-8
Stock : 6316

Additional Infomation About Product

BUK7M67-60E N-channel 60 V, 67 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 60 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 14 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 31 W tot mb Static characteristics R drain-source on-state V = 10 V I = 5 A T = 25 C Fig. 11 - 54 67 m DSon GS D j resistance Dynamic characteristics Q gate-drain charge I = 5 A V = 48 V V = 10 V - 2.5 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7M67-60E N-channel 60 V, 67 m standard level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7M67-60E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7M67-60E 76760E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 60 V DS j V drain-gate voltage R = 20 k - 60 V DGR GS V gate-source voltage DC T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 31 W tot mb I drain current V = 10 V T = 25 C Fig. 2 - 14 A D GS mb V = 10 V T = 100 C Fig. 2 - 10.2 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 58 A DM p mb T storage temperature -55 175 C stg BUK7M67-60E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

Looking for help? Visit our FAQ's Section to answer to all your questions

Resources

Company

Support

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
  +61 8 9358 9358 |   sales@x-on.com.au |   Chat
 
Policies | Terms and Conditions | Sitemap

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted