X-On Electronics has gained recognition as a prominent supplier of RS3E095BNGZETB mosfet across the USA, India, Europe, Australia, and various other global locations. RS3E095BNGZETB mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RS3E095BNGZETB ROHM

RS3E095BNGZETB electronic component of ROHM
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See Product Specifications
Part No.RS3E095BNGZETB
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET Nch 30V 9.5A Si MOSFET
Datasheet: RS3E095BNGZETB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.215 ea
Line Total: USD 1.22

Availability - 1778
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1859 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 0.8165
10 : USD 0.6785
100 : USD 0.5439
500 : USD 0.4738
1000 : USD 0.3968
2500 : USD 0.3784
5000 : USD 0.3784
10000 : USD 0.3634

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
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We are delighted to provide the RS3E095BNGZETB from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RS3E095BNGZETB and other electronic components in the MOSFET category and beyond.

RS3E095BN Datasheet Nch 30V 9.5A Middle Power MOSFET llOutline V 30V DSS R (Max.) 14.6m DS(on) SOP8 I 9.5A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small surface mount package (SOP8). 3) Pb-free lead plating RoHS compliant. llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Quantity (pcs) 2500 Taping code TB Marking RS3E095BN llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 9.5 A D *1 I Pulsed drain current 36 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I 9.5 A AS *2 E Avalanche energy, single pulse 12.9 mJ AS *3 P 2.0 W D Power dissipation *4 P 1.4 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 1/11 20190527 - Rev.001 RS3E095BN Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 /W thJA Thermal resistance, junction - ambient *4 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 21 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 1.0 - 2.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -3 - mV/ temperature coefficient T referenced to 25 j V = 10V, I = 9.5A - 11.9 14.6 GS D Static drain - source *5 R m DS(on) on - state resistance V = 4.5V, I = 9.5A - 17.5 21.9 GS D R Gate resistance f = 1MHz, open drain - 3.6 - G Forward Transfer *5 Y V = 5V, I = 9.5A 6.5 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 0.2mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a FR4 (25250.8mm) *5 Pulsed www.rohm.com 2/11 20190527 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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