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RS3E180ATTB1

RS3E180ATTB1 electronic component of ROHM
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See Product Specifications
Part No.RS3E180ATTB1
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET PCH -30V -18A POWER
Datasheet: RS3E180ATTB1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.6016 ea
Line Total: USD 3.6

1743 - Global Stock
Ships to you between
Wed. 05 Jun to Fri. 07 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
786 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 2.622
10 : USD 2.208
100 : USD 1.8055
500 : USD 1.5755
1000 : USD 1.3685
2500 : USD 1.334
5000 : USD 1.311

We proudly offer the RS3E180ATTB1 MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RS3E180ATTB1 MOSFET.
     
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RS3E180AT Datasheet Pch -30V -18A Power MOSFET llOutline V -30V DSS R (Max.) 5.4m DS(on) SOP8 I 18A D P 2.0W D llInner circuit llFeatures 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 330 llApplication Tape width (mm) 12 Type Switching Basic ordering unit (pcs) 2500 Taping code TB1 Marking RS3E180AT llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage -30 V DSS Continuous drain current I 18 A D *1 I Pulsed drain current 72 A DP V Gate - Source voltage 20 V GSS *2 Avalanche current, single pulse I -18 A AS *2 E Avalanche energy, single pulse 81 mJ AS *3 P 2.0 W D Power dissipation *4 P 1.4 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2018 ROHM Co., Ltd. All rights reserved. 1/11 20180723 - Rev.001 RS3E180AT Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R - - 62.5 /W thJA Thermal resistance, junction - ambient *4 R - - 89.2 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = -1mA -30 - - V (BR)DSS GS D voltage V I = -1mA (BR)DSS D Breakdown voltage - -22 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = -30V, V = 0V - - -1 A DSS DS GS drain current I V = 20V, V = 0V Gate - Source leakage current - - 500 nA GSS GS DS V V = V , I = -5mA Gate threshold voltage -1.0 - -2.5 V GS(th) DS GS D V I = -1mA GS(th) D Gate threshold voltage - 2.9 - mV/ temperature coefficient T referenced to 25 j V = -10V, I = -18A - 4.1 5.4 GS D Static drain - source *5 R m DS(on) on - state resistance V = -4.5V, I = -18A - 5.0 6.1 GS D R Gate resistance f = 1MHz, open drain - 3.0 - G Forward Transfer *5 Y V = -5V, I = -18A 22 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 L 0.5mH, V = -15V, R = 25, Starting T = 25 Fig.3-1,3-2 DD G j *3 Mounted on a ceramic board (30300.8mm) *4 Mounted on a Cu board (25250.8mm) *5 Pulsed www.rohm.com 2/11 20180723 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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