MCP07N65 Features High Current Rating Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free. Green Device (Note 1) N-CHANNEL Lead Free Finish/RoHS Compliant Suffix Designates RoHS Compliant. See Ordering Information) MOSFET Maximum Ratings Operating Junction Temperature Range : -55C to +150C Storage Temperature Range: -55C to +150C Thermal Resistance: 1.71C/W Junction to Case TO-220AB(H) A Parameter Symbol Rating Unit E B G Drain-Source Voltage V 650 V DS C Continuous Drain Current 25C I 7 A D P D Continuous Drain Current 100C I 4.2 A S D F (Note 2) I 28 Pulsed Drain Current A 1 2 3 DM R H J Gate-Source Volltage V 30 V GS (Note 3) K E 220 mJ Single Pulse Avalanche AS L O (Note 3) I 7 A Pulsed Avalanche Rating AS 73 W Power Dissipation PD N Q M Note: 1. Halogen freeGreen products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. DIMENSIONS 2. Pulse Width Limited by Maximum Junction Temperature. INCHES MM 3. V =50V, V =650V, R =25, T =25C. DD DS G J DIM NOTE MIN MAX MIN MAX A 0.172 0.188 4.37 4.77 B 0.049 0.057 1.25 1.45 C 0.246 0.270 6.25 6.85 Internal Structure D 0.594 0.634 15.10 16.10 E 0.382 0.406 9.70 10.30 F 0.346 0.370 8.80 9.40 G 0.102 0.118 2.60 3.00 D H 0.087 0.102 2.20 2.60 J ----- 0.134 ----- 3.40 K 0.046 0.058 1.17 1.47 L 0.028 0.037 0.70 0.95 M 0.200 5.08 TYP. G 1. Gate 0.100 2.54 N TYP. O 0.502 0.543 12.75 13.80 2. Drain P 0.134 0.150 3.40 3.80 3. Source S Q 0.016 0.026 0.40 0.65 R 0.276 ----- 7.00 ----- S 0.217 ----- 5.50 ----- Rev.3-3-12012020 1/4 MCCSEMI.COMMCP07N65 Electrical Characteristics 25C (Unless Otherwise Specified) Parameter Symbol Test conditions Min Typ Max Unit Static Characteristics V V =0V, I =250A Drain-Source Breakdown Voltage 650 V (BR)DSS GS D Gate-Source Leakage Current I V =0V, V =30V 100 nA GSS DS GS V =650V, V =0V,T =25C 1 DS GS J Zero Gate Voltage Drain Current I A DSS V =650V, V =0V,T =150C 10 DS GS J V V =V , I =250A Gate-Threshold Voltage 2.5 4.5 V GS(th) DS GS D Drain-Source On-Resistance R V =10V, I =3.5A 1.15 1.4 DS(on) GS D Dynamic Characteristics C Input Capacitance 1600 iss V =25V,V =0V,f =1MHz Output Capacitance C 85 pF oss DS GS C Reverse Transfer Capacitance 3.5 rss Total Gate Charge Q 26 g Q V =520V,V =10V,I =7A nC Gate-Source Charge DD GS D 10.5 gs Gate-Drain Charge Q 7.1 gd Drain-Source Diode Characteristics and Maximum Ratings Maximum Body-Diode Continuous I 7 A S Current Diode Forward Voltage V V =0V, I =I 1.5 V SD GS F S Rev.3-3-12012020 2/4 MCCSEMI.COM