Product Information

STB7NK80Z-1

STB7NK80Z-1 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.0939 ea
Line Total: USD 2.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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STB7NK80Z-1
STMicroelectronics

1 : USD 2.0939
10 : USD 1.7082
100 : USD 1.4775
250 : USD 1.448

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STB7NK80Z-1
STMicroelectronics

1 : USD 9.4028
10 : USD 3.3871
25 : USD 3.1948

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z 2 2 N-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D PAK,I PAK Zener-protected SuperMESH Power MOSFET Features V DSS Type R I DS(on) D ( Tjmax) STP7NK80Z 800V < 1.8 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8 5.2A STB7NK80Z-1 800V < 1.8 5.2A Extremely high dv/dt capability 100% avalanche tested 3 3 2 1 1 Gate charge minimized 2 2 I PAK D PAK Very low intrinsic capacitances Very good manufacturing repeatability Figure 1. Internal schematic diagram Applications D(2) Switching application Description The SuperMESH series is obtained through an G(1) extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary S(3) AM01476v1 MDmesh products. Table 1. Device summary Order codes Marking Package Packaging STB7NK80ZT4 B7NK80Z DPAK Tape e reel STB7NK80Z-1 B7NK80Z IPAK STP7NK80Z P7NK80Z TO-220 Tube STP7NK80ZFP P7NK80ZFP TO-220FP March 2010 Doc ID 8979 Rev 6 1/17 www.st.com 17Contents STB7NK80Z, STB7NK80Z-1, STP7NK80ZFP, STP7NK80Z Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17 Doc ID 8979 Rev 6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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