Product Information

BUK7M22-80EX

BUK7M22-80EX electronic component of Nexperia

Datasheet
MOSFET BUK7M22-80E/MLFPAK/REEL 7" Q1/
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9424 ea
Line Total: USD 0.94

83880 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
69262 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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BUK7M22-80EX
Nexperia

1 : USD 0.8424
10 : USD 0.6906
100 : USD 0.5505
500 : USD 0.4794
1000 : USD 0.407
1500 : USD 0.401
3000 : USD 0.3702
9000 : USD 0.3702
24000 : USD 0.3702

Read More Specifications

     
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RoHS - XON
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Technology
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Factory Pack Quantity :
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Hts Code
Mxhts
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Additional Infomation About Product

BUK7M22-80E N-channel 80 V, 22 m standard level MOSFET in LFPAK33 19 September 2016 Product data sheet 1. General description Standard level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Features and benefits Q101 Compliant Repetitive avalanche rated Suitable for thermally demanding environments due to 175 C rating True standard level gate with V rating of greater than 1 V at 175 C GS(th) 3. Applications 12 V, 24 V and 48 V automotive systems Motors, lamps and solenoid control Transmission control Ultra high performance power switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 80 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 37 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 75 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C - 18 22 m DSon GS D j resistance Fig. 11 Dynamic characteristics Q gate-drain charge I = 10 A V = 64 V V = 10 V - 8 - nC GD D DS GS T = 25 C Fig. 13 Fig. 14 jNexperia BUK7M22-80E N-channel 80 V, 22 m standard level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S Source D 2 S Source G 3 S Source mbb076 S 4 G Gate mb D Mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7M22-80E LFPAK33 Plastic single ended surface mounted package SOT1210 (LFPAK33) 8 leads 7. Marking Table 4. Marking codes Type number Marking code BUK7M22-80E 72280E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 80 V DS j V drain-gate voltage R = 20 k - 80 V DGR GS V gate-source voltage DC T 175 C -20 20 V GS j P total power dissipation T = 25 C Fig. 1 - 75 W tot mb I drain current V = 10 V T = 25 C Fig. 2 - 37 A D GS mb V = 10 V T = 100 C Fig. 2 - 26 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 147 A DM p mb T storage temperature -55 175 C stg BUK7M22-80E All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 September 2016 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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