Si4058DY www.vishay.com Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY ThunderFET power MOSFET a V (V) R () MAX. I (A) Q (TYP.) DS DS(on) D g 100 % R and UIS tested g 0.026 at V = 10 V 10.3 GS 100 5.8 nC Material categorization: 0.033 at V = 4.5 V 9.2 GS for definitions of compliance please see www.vishay.com/doc 99912 SO-8 Single D D 5 APPLICATIONS D D 6 DC/DC primary side switch D 7 8 Synchronous rectification Fast charger Industrial G 4 G 33 SS 22 SS 11 S Top View S Ordering Information: N-Channel MOSFET Si4058DY-T1-GE3 (lead (Pb)-free and halogen-free) ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 10.3 C T = 70 C 8.3 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 7 A b, c T = 70 C 5.5 A A Pulsed Drain Current (t = 300 s) I 50 DM Continuous Source-Drain Diode Current T = 25 C I 5 C S Single Pulse Avalanche Current I 15 AS L = 0.1 mH Avalanche Energy E 11.2 mJ AS T = 25 C 5.6 C T = 70 C 3.6 C Maximum Power Dissipation P W D b, c T = 25 C 2.6 A b, c T = 70 C 1.6 A Operating Junction and Storage Temperature Range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICALMAXIMUMUNIT b, d Maximum Junction-to-Ambient t 10 s R 39 48 thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 18 22 thJF Notes a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board c. t = 10 s. d. Maximum under steady state conditions is 90 C/W. S16-1126-Rev. A, 06-Jun-16 Document Number: 67409 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si4058DY www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T -61 - DS DS J I = 250 A mV/C D V Temperature Coefficient V /T --3.8- GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = 250 A 1.2 - 2.8 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 20 V - - 100 nA GSS DS GS V = 100 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 100 V, V = 0 V, T = 70 C - - 10 DS GS J a On-State Drain Current I V 5 V, V = 10 V 20 - - A D(on) DS GS V = 10 V, I = 10 A - 0.0217 0.0260 GS D a Drain-Source On-State Resistance R DS(on) V = 4.5 V, I = 8 A - 0.0266 0.0330 GS D a Forward Transconductance g V = 15 V, I = 10 A - 31 - S fs DS D b Dynamic Input Capacitance C - 690 - iss Output Capacitance C -V = 50 V, V = 0 V, f = 1 MHz280- pF oss DS GS Reverse Transfer Capacitance C -11- rss V = 50 V, V = 10 V, I = 10 A - 12 18 DS GS D Total Gate Charge Q g -5.8 9 Gate-Source Charge Q -2V = 50 V, V = 4.5 V, I = 10 A.1- nC gs DS GS D Gate-Drain Charge Q -2.2 - gd Output Charge Q V = 50 V, V = 0 V - 22.5 35 oss DS GS Gate Resistance R f = 1 MHz 0.8 2.2 4.0 g Turn-On Delay Time t -8 16 d(on) Rise Time t -1734 r V = 50 V, R = 5 DD L I 10 A, V = 4.5 V, R = 1 Turn-Off Delay Time t -1D GEN g122 d(off) Fall Time t -8 16 f ns Turn-On Delay Time t -7 14 d(on) Rise Time t -1632 r V = 50 V, R = 5 DD L I 10 A, V = 10 V, R = 1 Turn-Off Delay Time t -1D GEN g 224 d(off) Fall Time t -7 14 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - - 5 S C A a Pulse Diode Forward Current I -- 50 SM Body Diode Voltage V I = 5 A - 0.81 1.1 V SD S Body Diode Reverse Recovery Time t - 56 112 ns rr Body Diode Reverse Recovery Charge Q - 60 120 nC rr I = 10 A, di/dt = 100 A/s, F T = 25 C Reverse Recovery Fall Time t J -48 - a ns Reverse Recovery Rise Time t -8 - b Notes a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-1126-Rev. A, 06-Jun-16 Document Number: 67409 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000