New Product Si4110DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R () Q (Typ.) I (A) DS DS(on) g D TrenchFET Power MOSFET RoHS 0.013 at V = 10 V 80 17.3 35 nC GS 100 % R Tested COMPLIANT g 100 % UIS Tested APPLICATIONS Primary Side Switch Half Bridge SO-8 Intermediate Bus Converter D S 1 8 D S D 2 7 S 3 6 D G G D 4 5 Top View S N-Channel MOSFET Ordering Information: Si4110DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit V Drain-Source Voltage 80 DS V V Gate-Source Voltage 20 GS T = 25 C 17.3 C T = 70 C 13.9 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C A 11.7 b, c T = 70 C A 9.4 A I Pulsed Drain Current 60 DM T = 25 C 6.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 3 I Single Pulse Avalanche Current 35 AS L = 0.1 mH E mJ Single Pulse Avalanche Energy 61.3 AS T = 25 C 7.8 C T = 70 C 5 C P Maximum Power Dissipation W D b, c T = 25 C A 3.6 b, c T = 70 C A 2.3 T , T Operating Junction and Storage Temperature Range - 55 to 150 J stg C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 10 s R 29 35 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Foot (Drain) Steady State 13 16 thJF Notes: a. Based on T = 25 C. C b. Surface mounted on 1 x 1 FR4 board. c. t = 10 s. d. Maximum under Steady State conditions is 80 C/W. Document Number: 68766 www.vishay.com S-81713-Rev. A, 04-Aug-08 1New Product Si4110DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 80 V DS GS D V Temperature Coefficient V /T 84 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 9.8 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 24V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Source Leakage 100 nA GSS DS GS V = 80 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 55 C 10 DS GS J a I V 10 V, V = 10 V 20 A On-State Drain Current D(on) DS GS a R V = 10 V, I = 11.7 A 0.0108 0.0130 Drain-Source On-State Resistance DS(on) GS D a g V = 15 V, I = 11.7 A 23 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 2205 iss Output Capacitance C V = 40 V, V = 0 V, f = 1 MHz 260 pF oss DS GS C Reverse Transfer Capacitance 78 rss Total Gate Charge Q 35 53 g Q V = 40 V, V = 10 V, I = 11.7 A Gate-Source Charge 12.5 nC gs DS GS D Gate-Drain Charge Q 8 gd R Gate Resistance f = 1 MHz 0.22 1.1 2.2 g Turn-on Delay Time t 18 27 d(on) t Rise Time V = 40 V, R = 4.3 10 18 r DD L I 9.4 A, V = 8 V, R = 1 t Turn-Off Delay Time D GEN g 22 33 d(off) t Fall Time 816 f ns t Turn-On Delay Time 15 23 d(on) t Rise Time V = 40 V, R = 4.3 918 r DD L I 9.4 A, V = 10 V, R = 1 t Turn-Off Delay Time D GEN g 22 33 d(off) Fall Time t 714 f Drain-Source Body Diode Characteristics I T = 25 C Continuous Source-Drain Diode Current 6.5 S C A a I 60 Pulse Diode Forward Current SM V I = 9.4 A Body Diode Voltage 0.80 1.2 V SD S t Body Diode Reverse Recovery Time 45 68 ns rr Q Body Diode Reverse Recovery Charge 82 123 nC rr I = 9.4 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 34 a ns Reverse Recovery Rise Time t 11 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68766 2 S-81713-Rev. A, 04-Aug-08