Product Information

2N7002BKV,115

2N7002BKV,115 electronic component of Nexperia

Datasheet
MOSFET Dual N-Channel 60V 340mA
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

104: USD 0.077 ea
Line Total: USD 8.01

3880 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 104  Multiples: 1
Pack Size: 1

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58200 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4000
Multiples : 4000

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2N7002BKV,115
Nexperia

4000 : USD 0.084
8000 : USD 0.084
12000 : USD 0.084
16000 : USD 0.084
20000 : USD 0.084

11640 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4000
Multiples : 4000

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2N7002BKV,115
Nexperia

4000 : USD 0.084

2007 - WHS 3


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Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

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2N7002BKV,115
Nexperia

5 : USD 0.2101
50 : USD 0.1677
150 : USD 0.1496
500 : USD 0.1269
2500 : USD 0.1169
4000 : USD 0.1108

7719 - WHS 4


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 95
Multiples : 1

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2N7002BKV,115
Nexperia

95 : USD 0.517
100 : USD 0.5156
250 : USD 0.5143
500 : USD 0.5128
1000 : USD 0.5026

23280 - WHS 5


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4000
Multiples : 4000

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2N7002BKV,115
Nexperia

4000 : USD 0.0812
8000 : USD 0.0796

3880 - WHS 6


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 104
Multiples : 1

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2N7002BKV,115
Nexperia

104 : USD 0.077
1000 : USD 0.0762
4000 : USD 0.075
8000 : USD 0.0734

34920 - WHS 7


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4000
Multiples : 4000

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2N7002BKV,115
Nexperia

4000 : USD 0.0772
8000 : USD 0.0757

34920 - WHS 8


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 4000
Multiples : 4000

Stock Image

2N7002BKV,115
Nexperia

4000 : USD 0.115
8000 : USD 0.1127

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Product
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif

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Additional Infomation About Product

2N7002BKV 60 V, 340 mA dual N-channel Trench MOSFET Rev. 2 22 September 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ESD protection up to 2 kV AEC-Q101 qualified 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T =25 C- - 60V DS amb V gate-source voltage T =25 C- - 20 V GS amb 1 I drain current T =25 C -- 340 mA D amb V =10V GS R drain-source on-state T =25 C -1 1.6 DSon j resistance V =10V GS I = 500 mA D 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .2N7002BKV Nexperia 60 V, 340 mA dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic symbol 1S1 source1 6 5 4 2 G1 gate 1 1 6 3D2 drain2 4S2 source2 5 G2 gate 2 2 5 12 3 6D1 drain1 3 4 017aaa055 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKV - plastic surface-mounted package 6 leads SOT666 4. Marking Table 4. Marking codes Type number Marking code 2N7002BKV ZG 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor V drain-source voltage T =25 C-60V DS amb V gate-source voltage T =25 C- 20 V GS amb 1 I drain current V =10V D GS T =25 C- 340mA amb T =100 C- 240mA amb I peak drain current T =25 C -1.2 A DM amb single pulse t 10 s p 2N7002BKV All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 22 September 2010 2 of 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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