MOSFET 2N7002-HF (N-Channel) RoHS Device Halogen Free SOT-23 Features 0.119(3.00) -Power dissipation : 0.35W 0.110(2.80) D Equivalent Circuit 0.056(1.40) 0.047(1.20) D G S 0.083(2.10) 0.066(1.70) 0.006(0.15) G : Gate 0.002(0.05) S : Source G 0.044(1.10) 0.103(2.60) D : Drain 0.035(0.90) 0.086(2.20) S 0.006(0.15)max 0.020(0.50) 0.013(0.35) Maximum Ratings (at TA=25C) 0.007(0.20)min Symbol Parameter Value Unit Drain-Source voltage VDS 60 V Dimensions in inches and (millimeter) Drain current ID 250 mA Power dissipation PD 350 mW Junction and storage temperature TJ, TSTG -55 ~ +150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit Drain-Source breakdown voltage VGS=0V, ID=10 A V(BR)DSS 60 70 V Gate-Threshold voltage VDS=VGS, ID=250 A Vth(GS) 1 1.5 2.5 Gate-body leakage VDS=0V, VGS=15V IGSS 10 nA VDS=60V, VGS=0V 1 A Zero gate voltage drain current IDSS VDS=60V, VGS=0V, TJ=125C 500 800 1300 VGS=10V, VDS=7.5V On-state drain current ID(ON) mA 700 VGS=4.5V, VDS=10V 500 VGS=10V, ID=250mA 1.5 3 Drain-Source on resistance rDS(ON) 2.0 4 VGS=4.5V, ID=200mA mS Forward tran conductance gts VDS=15V, ID=200mA 300 V Diode forward voltage VSD 0.85 1.2 IS=200mA, VGS=0V Total gate charge Qg 0.6 1.0 nC Gate-Source charge Qgs 0.06 VDS=30V, VGS=10V, ID=250mA Gate-Drain charge Qgd 0.06 Input capacitance Ciss 25 pF Output capacitance COSS 6 VDS=25V, VGS=0V, f=1MHz Reverse transfer capacitance CrSS 1.2 td(ON) 7.5 20 Turn-on time VDD=30V, RL=200 nS tr 6 ID=100mA, VGEN=10V RG=10 Turn-off time 7.5 td(off) 20 REV:B QW-JTR03 Page 1 Comchip Technology CO., LTD.MOSFET RATING AND CHARACTERISTIC CURVES (2N7002-HF) Fig.1 On-Region Characteristics Fig.2 On-Resistance vs Drain Current 1.0 7 O VGS=10V T = 25C J 9.0V 8.0V 6 7.0V 0.8 6.5V VGS = 5.0V 6.0V 4.5V 5 4.0V 3.5V 5.5V 0.6 3.0V 4 2.5V 2.0/1.0V 5.0V VGS = 10V 3 0.4 2 0.2 1 0 0 0 1 2 3 4 5 0 0.2 0.4 0.6 0.8 1.0 VDS, Drain-Source Voltage(V) ID, Drain Current (A) Fig.3 On-Resistance vs Junction Temperature Fig.4 On-Resistance vs Gate-Source Voltage 2.0 6 5 1.5 VGS=10V, ID=0.5A 4 ID = 500mA VGS=5V, ID=0.05A 1.0 3 ID = 50mA 2 0.5 1 0 0 -55 -30 -5 20 45 70 95 120 145 0 2 4 6 8 10 12 14 16 18 O TJ, Junction Temperature ( C) VGS, Gate to Source Voltage (V) REV:B QW-JTR03 Page 2 Comchip Technology CO., LTD. RDS(ON), Normalized Drain-Source ID, Drain-Source Current (A) On-Resistance RDS(ON), Normalized RDS(ON), Normalized Drain-Source On-Resistance Drain-Source On-Resistance