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The 2N7002DWH6327XTSA1 is a N-Channel MOSFET from Infineon. It has an ordinary P-Channel MOSFET in a P-Channel, very low gate charge version, which allows fast switching and lower power consumption when switching. This MOSFET is a member of the Infineon OptiMOS™ 5 family, specifically designed for DC-DC voltage conversion up to 30V and offering improved services and robustness over regular MOSFETs. The 2N7002DWH6327XTSA1 is in a small SOT-23 package and has an operating temperature range of -55°C to +150°C. It has a low on-resistance of 0.0055Ohm, a low gate-source leakage current of 0.1uA, and an efficient power dissipation of 0.195W. This MOSFET is suitable for a wide range of applications including motor and lighting control, overvoltage protection, and battery protection.