2N7002BKM,315 Nexperia

2N7002BKMB 60 V, single N-channel Trench MOSFET Rev. 2 13 June 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Logic-level compatible Trench MOSFET technology Ultra thin package profile with 0.37 mm height ESD protection up to 2 kV 1.3 Applications Relay driver Low-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C --60 V DS j V gate-source voltage -20 - 20 V GS 1 I drain current V =10V T =25C - - 450 mA D GS amb Static characteristics R drain-source on-state V =10V I =450 mA T =25C - 1 1.6 DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 1 cm .2N7002BKMB Nexperia 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 1 2S source 3 3 D drain 2 G Transparent top view SOT883B (DFN1006B-3) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version 2N7002BKMB DFN1006B-3 Leadless ultra small plastic package 3 solder lands SOT883B body 1.0 x 0.6 x 0.37 mm 4. Marking Table 4. Marking codes Type number Marking code 2N7002BKMB 0000 0001 PIN 1 INDICATION READING DIRECTION READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac673 Fig 1. DFN1006B-3 (SOT883B) binary marking code description 2N7002BKMB All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 2 13 June 2012 2 of 15