Product Information

N25Q016A11E5140F

N25Q016A11E5140F electronic component of Micron

Datasheet
NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 16M-bit 16M/8M/4M x 1/2-bit/4-bit 7ns T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

41: USD 1.831 ea
Line Total: USD 75.07

0 - Global Stock
MOQ: 41  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 41
Multiples : 1
41 : USD 1.831
100 : USD 1.5232
250 : USD 1.4753

     
Manufacturer
Product Category
Timing Type
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Density
Operating Temperature Classification
Operating Supply Voltage Typ
Operating Temp Range
Rad Hardened
Boot Type
Programmable
Cell Type
Address Bus
LoadingGif

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16Mb, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q016A11E Deep power-down mode: 5A (TYP) Features Write protection SPI-compatible serial bus interface Software write protection applicable to every 108 MHz (MAX) clock frequency 64KB sector via volatile lock bit 1.72.0V single supply voltage Hardware write protection: protected area size Dual/quad I/O instruction provides increased defined by five nonvolatile bits (BP0, BP1, BP2, throughput up to 432 MB/s and TB) Supported protocols Additional smart protections, available upon re- Extended SPI, dual I/O, and quad I/O quest Execute-in-place (XIP) mode for all three protocols Electronic signature Configurable via volatile or nonvolatile registers JEDEC-standard 2-byte signature (BB15h) Enables memory to work in XIP mode directly af- Two additional extended device ID (EDID) bytes ter power-on to identify device factory options PROGRAM/ERASE SUSPEND operations Unique ID code (UID): 14 read-only bytes Continuous read of entire memory via a single com- Minimum 100,000 ERASE cycles per sector mand More than 20 years data retention Fast read Packages JEDEC standard, all RoHS compliant Quad or dual output fast read F4 = U-PDFN-8/4mm x 3mm (MLP8) Quad or dual I/O fast read F6 = V-PDFN-8/6mm x 5mm (MLP8) Flexible to fit application SC = SOP2-8/150 mil (SO8N) Configurable number of dummy cycles 51 = XF-SCSP-8/2mm x 2.8mm (XFCSP) Output buffer configurable Software reset Hardware RESET function available upon customer request 64-byte, user-lockable, one-time programmable (OTP) dedicated area Erase capability Subsector erase 4KB uniform granularity blocks Subsector erase 32KB uniform granularity blocks Sector erase 64KB uniform granularity blocks PDF: 09005aef84a4754f Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 n25q 16mb 1 8v 65nm.pdf - Rev. G 1/16 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.16Mb, Multiple I/O Serial Flash Memory Features Contents Device Description ........................................................................................................................................... 6 Features ....................................................................................................................................................... 6 3-Byte Address Modes .................................................................................................................................. 6 Operating Protocols ...................................................................................................................................... 6 XIP Mode ..................................................................................................................................................... 6 Device Configurability .................................................................................................................................. 7 Signal Assignments ........................................................................................................................................... 8 Signal Descriptions ........................................................................................................................................... 9 Memory Organization .................................................................................................................................... 11 Memory Configuration and Block Diagram .................................................................................................. 11 Memory Map ............................................................................................................................................. 12 Device Protection ........................................................................................................................................... 13 Serial Peripheral Interface Modes .................................................................................................................... 15 SPI Protocols .................................................................................................................................................. 17 Nonvolatile and Volatile Registers ................................................................................................................... 18 Status Register ............................................................................................................................................ 19 Nonvolatile and Volatile Configuration Registers .......................................................................................... 20 Enhanced Volatile Configuration Register .................................................................................................... 23 Flag Status Register ..................................................................................................................................... 24 Command Definitions .................................................................................................................................... 25 READ REGISTER and WRITE REGISTER Operations ........................................................................................ 27 READ STATUS REGISTER or FLAG STATUS REGISTER Command ................................................................ 27 READ NONVOLATILE CONFIGURATION REGISTER Command ................................................................... 28 READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command .................................. 28 WRITE STATUS REGISTER Command ......................................................................................................... 28 WRITE NONVOLATILE CONFIGURATION REGISTER Command ................................................................. 29 WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command ................................. 29 READ LOCK REGISTER Command .............................................................................................................. 30 WRITE LOCK REGISTER Command ............................................................................................................ 31 CLEAR FLAG STATUS REGISTER Command ................................................................................................ 32 READ IDENTIFICATION Operations ............................................................................................................... 33 READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 33 READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 34 READ MEMORY Operations ............................................................................................................................ 38 PROGRAM Operations .................................................................................................................................... 42 WRITE Operations .......................................................................................................................................... 47 WRITE ENABLE Command ......................................................................................................................... 47 WRITE DISABLE Command ........................................................................................................................ 47 ERASE Operations .......................................................................................................................................... 49 SUBSECTOR ERASE Command ................................................................................................................... 49 SECTOR ERASE Command ......................................................................................................................... 49 BULK ERASE Command ............................................................................................................................. 50 PROGRAM/ERASE SUSPEND Command ..................................................................................................... 51 PROGRAM/ERASE RESUME Command ...................................................................................................... 53 RESET Operations .......................................................................................................................................... 54 RESET ENABLE and RESET MEMORY Command ........................................................................................ 54 RESET Conditions ...................................................................................................................................... 54 ONE TIME PROGRAMMABLE Operations ....................................................................................................... 55 READ OTP ARRAY Command ...................................................................................................................... 55 PROGRAM OTP ARRAY Command .............................................................................................................. 55 PDF: 09005aef84a4754f Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 n25q 16mb 1 8v 65nm.pdf - Rev. G 1/16 EN 2012 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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