Product Information

N25Q032A11ESE40F

N25Q032A11ESE40F electronic component of Micron

Datasheet
NOR Flash Serial 1.8V 32M-bit 4M x 8 7ns 8-Pin SO W T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 2.4321 ea
Line Total: USD 3648.15

0 - Global Stock
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 1500
Multiples : 1500
1500 : USD 2.4321
3000 : USD 2.1438

     
Manufacturer
Product Category
Mounting Style
Package / Case
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Cell Type
Operating Temp Range
Pin Count
Program/Erase Volt Typ
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
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32Mb, 1.8V, Multiple I/O Serial Flash Memory Features Micron Serial NOR Flash Memory 1.8V, Multiple I/O, 4KB Sector Erase N25Q032A Write protection Features Software write protection applicable to every SPI-compatible serial bus interface 64KB sector via volatile lock bit 108 MHz (MAX) clock frequency Hardware write protection: protected area size 1.72.0V single supply voltage defined by four nonvolatile bits (BP0, BP1, BP2, Dual/quad I/O instruction provides increased and TB) throughput up to 432 MHz Additional smart protections, available upon re- Supported protocols quest Extended SPI, dual I/O, and quad I/O Electronic signature Execute-in-place (XIP) mode for all three protocols JEDEC-standard 2-byte signature (BB16h) Configurable via volatile or nonvolatile registers Unique ID code (UID): 17 read-only bytes, in- Enables memory to work in XIP mode directly af- cluding: ter power-on Two additional extended device ID (EDID) PROGRAM/ERASE SUSPEND operations bytes to identify device factory options Continuous read of entire memory via a single com- Customized factory data (14 bytes) mand Minimum 100,000 ERASE cycles per sector Fast read More than 20 years data retention Quad or dual output fast read Packages JEDEC standard, all RoHS compliant Quad or dual I/O fast read F4 = UF-PDFN-8 4mm x 3mm (MLP8 4mm x Flexible to fit application 3mm) Configurable number of dummy cycles F6 = V-PDFN-8 6mm x 5mm ( MLP8 6mm x Output buffer configurable 5mm ) Software reset F8 = V-PDFN-8 8mm x 6mm (MLP8 8mm x 6mm) 64-byte, user-lockable, one-time programmable 12 = T-PBGA-24b05 6mm x 8mm (OTP) dedicated area SF = SOP2-16 300 mils body width (SO16W) Erase capability SE = SOP2-8 208 mils body width (SO8W) Subsector erase 4KB uniform granularity blocks Sector erase 64KB uniform granularity blocks Full-chip erase 09005aef84566617 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 n25q 32mb 1 8v 65nm.pdf - Rev. I 06/18 EN 2012 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.32Mb, 1.8V, Multiple I/O Serial Flash Memory Features Contents Important Notes and Warnings ......................................................................................................................... 6 Device Description ........................................................................................................................................... 7 Features ....................................................................................................................................................... 7 Operating Protocols ...................................................................................................................................... 7 XIP Mode ..................................................................................................................................................... 7 Device Configurability .................................................................................................................................. 8 Signal Assignments ........................................................................................................................................... 9 Signal Descriptions ......................................................................................................................................... 11 Memory Organization .................................................................................................................................... 13 Memory Configuration and Block Diagram .................................................................................................. 13 Memory Map 32Mb Density ......................................................................................................................... 14 Device Protection ........................................................................................................................................... 15 Serial Peripheral Interface Modes .................................................................................................................... 17 SPI Protocols .................................................................................................................................................. 19 Nonvolatile and Volatile Registers ................................................................................................................... 20 Status Register ............................................................................................................................................ 21 Nonvolatile and Volatile Configuration Registers .......................................................................................... 22 Enhanced Volatile Configuration Register .................................................................................................... 24 Flag Status Register ..................................................................................................................................... 25 Command Definitions .................................................................................................................................... 27 READ REGISTER and WRITE REGISTER Operations ........................................................................................ 29 READ STATUS REGISTER or FLAG STATUS REGISTER Command ................................................................ 29 READ NONVOLATILE CONFIGURATION REGISTER Command ................................................................... 29 READ VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command .................................. 30 WRITE STATUS REGISTER Command ......................................................................................................... 30 WRITE NONVOLATILE CONFIGURATION REGISTER Command ................................................................. 31 WRITE VOLATILE or ENHANCED VOLATILE CONFIGURATION REGISTER Command ................................. 31 READ LOCK REGISTER Command .............................................................................................................. 32 WRITE LOCK REGISTER Command ............................................................................................................ 33 CLEAR FLAG STATUS REGISTER Command ................................................................................................ 34 READ IDENTIFICATION Operations ............................................................................................................... 35 READ ID and MULTIPLE I/O READ ID Commands ...................................................................................... 35 READ SERIAL FLASH DISCOVERY PARAMETER Command ......................................................................... 36 READ MEMORY Operations ............................................................................................................................ 39 PROGRAM Operations .................................................................................................................................... 43 WRITE Operations .......................................................................................................................................... 47 WRITE ENABLE Command ......................................................................................................................... 47 WRITE DISABLE Command ........................................................................................................................ 47 ERASE Operations .......................................................................................................................................... 49 SUBSECTOR ERASE Command ................................................................................................................... 49 SECTOR ERASE Command ......................................................................................................................... 49 BULK ERASE Command ............................................................................................................................. 50 PROGRAM/ERASE SUSPEND Command ..................................................................................................... 51 PROGRAM/ERASE RESUME Command ...................................................................................................... 53 RESET Operations .......................................................................................................................................... 54 RESET ENABLE and RESET MEMORY Command ........................................................................................ 54 RESET Conditions ...................................................................................................................................... 54 ONE TIME PROGRAMMABLE Operations ....................................................................................................... 55 READ OTP ARRAY Command ...................................................................................................................... 55 PROGRAM OTP ARRAY Command .............................................................................................................. 55 09005aef84566617 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 n25q 32mb 1 8v 65nm.pdf - Rev. I 06/18 EN 2012 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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