Product Information

N25Q128A13BSF40F

N25Q128A13BSF40F electronic component of Micron

Datasheet
NOR Flash Serial-SPI 3V/3.3V 128M-bit 16M x 8 7ns 16-Pin SO T/R

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

12: USD 5.3726 ea
Line Total: USD 64.47

0 - Global Stock
MOQ: 12  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 12
Multiples : 1
12 : USD 5.3726
25 : USD 5.2166
100 : USD 4.4732
250 : USD 4.3497

     
Manufacturer
Product Category
Mounting Style
Interface Type
Organisation
Timing Type
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Access Time Max
Address Bus
Boot Type
Operating Temp Range
Pin Count
Density
Operating Temperature Classification
Programmable
Rad Hardened
Operating Supply Voltage Typ
Cell Type
LoadingGif

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N25Q128 128-Mbit 3 V, multiple I/O, 4-Kbyte subsector erase on boot sectors, XiP enabled, serial flash memory with 108 MHz SPI bus interface Additional smart protections available upon Features customer request SPI-compatible serial bus interface Electronic signature 108 MHz (maximum) clock frequency JEDEC standard two-byte signature (BA18h) 2.7 V to 3.6 V single supply voltage Additional 2 Extended Device ID (EDID) Supports legacy SPI protocol and new Quad bytes to identify device factory options I/O or Dual I/O SPI protocol Unique ID code (UID) with 14 bytes read- Quad/Dual I/O instructions resulting in an only, available upon customer request equivalent clock frequency up to 432 MHz: More than 100,000 program/erase cycles per XIP mode for all three protocols sector Configurable via volatile or non-volatile More than 20 years data retention registers: enables XiP mode directly after power on Packages (all packages RoHS compliant) F8 = VDFPN8 8 x 6 mm (MLP8) Program/Erase suspend instructions 12 = TBGA24 6 x 8 mm Continuous read (entire memory) via single F6 = VDFPN8 6 x 5 mm (MLP) instruction: SF = SO16 (300 mils body width) Fast Read SE = SO8W (SO8 208 mils body width) Quad or Dual Output Fast Read Quad or Dual I/O Fast Read Flexible to fit application: Configurable number of dummy cycles Output buffer configurable Fast POR instruction: decrease power-on time Reset function (upon customer request) 64-byte user-lockable, one-time programmable (OTP) area Erase capability Subsector (4-Kbyte) granularity in the 8 boot sectors (bottom or top parts) Sector (64-Kbyte) granularity Write protections Software write protection applicable to every 64-Kbyte sector (volatile lock bit) Hardware write protection: protected area size defined by non-volatile bits (BP0, BP1, BP2, BP3 and TB bit) July 2014 Rev 8 1/183 Micron Technology, Inc., reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.Contents N25Q128 - 3 V Contents 1 Description 12 2 Signal descriptions . 16 2.1 Serial data output (DQ1) . 16 2.2 Serial data input (DQ0) . 16 2.3 Serial Clock (C) 16 2.4 Chip Select (S) . 16 2.5 Hold (HOLD) or Reset (Reset) . 17 2.6 Write protect/enhanced program supply voltage (W/VPP), DQ2 . 18 2.7 V supply voltage 18 CC 2.8 V ground 18 SS 3 SPI Modes 19 4 SPI Protocols 21 4.1 Extended SPI protocol . 21 4.2 Dual I/O SPI (DIO-SPI) protocol 21 4.3 Quad SPI (QIO-SPI) protocol 22 5 Operating features . 23 5.1 Extended SPI Protocol Operating features . 23 5.1.1 Read Operations 23 5.1.2 Page programming 23 5.1.3 Dual input fast program . 23 5.1.4 Dual Input Extended Fast Program 23 5.1.5 Quad Input Fast Program . 24 5.1.6 Quad Input Extended Fast Program . 24 5.1.7 Subsector erase, sector erase and bulk erase . 24 5.1.8 Polling during a write, program or erase cycle 24 5.1.9 Active power and standby power modes 25 5.1.10 Hold (or Reset) condition 25 5.2 Dual SPI (DIO-SPI) Protocol 27 5.2.1 Multiple Read Identification 27 2/183 Micron Technology, Inc., reserves the right to change products or specifications without notice. 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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