Product Information

MT41K256M8DA-125 AAT:K

MT41K256M8DA-125 AAT:K electronic component of Micron

Datasheet
DRAM Chip DDR3L SDRAM 2G-Bit 256Mx8 1.35V 78-Pin F-BGA

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1440
Multiples : 1
1440 : USD 9.3795
N/A

Obsolete
0 - WHS 2

MOQ : 1440
Multiples : 1440
1440 : USD 6.0688
2880 : USD 5.965
5760 : USD 5.8613
8640 : USD 5.7576
11520 : USD 5.6538
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 9.02
10 : USD 8.3076
25 : USD 7.3537
100 : USD 7.1363
250 : USD 6.7861
500 : USD 6.7137
1000 : USD 6.5447
2880 : USD 6.5326
5760 : USD 6.4963
N/A

Obsolete
     
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Package / Case
Data Bus Width
Organisation
Memory Size
Maximum Clock Frequency
Access Time
Supply Voltage - Max
Supply Voltage - Min
Supply Current - Max
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Maximum Operating Temperature
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Hts Code
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2Gb: x8, x16 Automotive DDR3L SDRAM Description 1.35V Automotive DDR3L SDRAM MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16 16 Meg x 16 x 8 banks Output driver calibration Description 2 AEC-Q100 The 1.35V DDR3L SDRAM device is a low-voltage ver- PPAP submission sion of the 1.5V DDR3 SDRAM device. Refer to the 8D response time DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode. Options Marking Configuration Features 256 Meg x 8 256M8 V = V = 1.35V (1.2831.45V) DD DDQ 128 Meg x 16 128M16 Backward-compatible to V = V = 1.5V 0.075V DD DDQ FBGA package (Pb-free) Differential bidirectional data strobe 78-ball FBGA (8mm x 10.5mm) DA 8n-bit prefetch architecture x8 Differential clock inputs (CK, CK ) 96-ball FBGA (8mm x 14mm) JT 8 internal banks x16 Nominal and dynamic on-die termination (ODT) Timing cycle time for data, strobe, and mask signals 1.07ns CL = 13 (DDR3-1866) -107 Programmable CAS (READ) latency (CL) 1.25ns CL = 11 (DDR3-1600) -125 Programmable posted CAS additive latency (AL) 1.5ns CL = 9 (DDR3-1333) -15E Programmable CAS (WRITE) latency (CWL) 1.875ns CL = 7 (DDR3-1066) -187E Fixed burst length (BL) of 8 and burst chop (BC) of 4 Product certification (via the mode register set MRS ) Automotive A Selectable BC4 or BL8 on-the-fly (OTF) Operating temperature Self refresh mode Industrial (40C T +95C) IT C Refresh maximum interval time at T temperature C Automotive (40C T +105C) AT C range 3 Ultra-high (40C T +125C) UT C 64ms at 40C to +85C Revision :K 32ms at +85C to +105C 16ms at +105C to +115C 1. Not all options listed can be combined to Notes: 8ms at +115C to +125C define an offered product. Use the part cat- Self refresh temperature (SRT) alog search on Automatic self refresh (ASR) 2Gb: x8, x16 Automotive DDR3L SDRAM Description Table 1: Key Timing Parameters (Continued) t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1 -15E 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 Notes: 1. Backward compatible to 1066, CL = 7 (-187E). 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-125). Table 2: Addressing Parameter 256 Meg x 8 128 Meg x 16 Configuration 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K Row address 32K A 14:0 16K A 13:0 Bank address 8 BA 2:0 8 BA 2:0 Column address 1K A 9:0 1K A 9:0 Figure 1: DDR3L Part Numbers ( DPSOH 3DUW 1XPEHU . 07 . 0 ,7 . H 0HJ ,7 XWRPRWLYH EDOO PP PP )%* EDOO PP PP )%* -7 XWRPRWLYH W &. QV &/ W &. QV &/ W &. QV &/ W &. QV &/ 1. Not all options listed can be combined to define an offered product. Use the part catalog search on Note:

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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